SavantIC Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5671 VCBO Collector-base voltage 90 V Open base 120 2N5672 VEBO V 150 2N5671 Collector-emitter voltage Emitter-base voltage UNIT 120 Open emitter 2N5672 VCEO VALUE Open collector 7 V IC Collector current 30 A IB Base current 10 A PD Total Power Dissipation 140 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5671 MIN TYP. MAX UNIT 90 IC=0.2A ;IB=0 2N5672 V 120 VCEsat Collector-emitter saturation voltage IC=15A; IB=1.2A 0.75 V VBEsat Base-emitter saturation voltage IC=15A ;IB=1.2A 1.5 V VBE Base-emitter on voltage IC=15A ; VCE=5V 1.6 V ICEO Collector cut-off current VCE=80V; IB=0 10 mA 2N5671 VCE=110V; VBE(off)=1.5V 12 2N5672 VCE=135V; VBE(off)=1.5V 10 ICEV Collector cut-off current mA 2N5671 2N5672 15 VCE=100V;VBE(off)=1.5V; TC=150 10 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=15A ; VCE=2V 20 hFE-2 DC current gain IC=20A ; VCE=5V 20 Trainsistion frequency IC=2A ; VCE=10V;f=1MHz 40 fT 10 mA 100 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=15A ;IB1=- IB2=1.2A VCC=30V;tp=0.1ms 2 0.5 µs 1.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N5671 2N5672