Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS 2N6053 VCBO Collector-base voltage -60 Open base 2N6054 VEBO V -80 2N6053 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N6054 VCEO VALUE V -80 Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -120 mA PD Total Power Dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.75 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6053 MIN TYP. MAX UNIT -60 IC=-0.1 A ;IB=0 2N6054 V -80 VCE(sat)-1 Collector-emitter saturation voltge IC=-4A ;IB=-16mA -2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA -3.0 V Base-emitter saturation voltage IC=-8A ;IB=-80mA -4.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-3V -2.8 V ICEO Collector cut-off current -0.5 mA VBE(sat) 2N6053 ICEX VCE=-30V; IB=0 2N6054 VCE=-40V; IB=0 2N6053 VCE=-60V; VBE(off)=-1.5V TC=150℃ -0.5 -5.0 2N6054 VCE=-80V; VBE(off)=-1.5V TC=150℃ -0.5 -5.0 -2.0 Collector cut-off current mA IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-4A ; VCE=-3V 750 hFE-2 DC current gain IC=-8A ; VCE=-3V 100 COB Output capacitance IE=0;VCB=-10V;f=0.1MHz 2 mA 18000 350 pF Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3