SAVANTIC 2SB1603A

SavantIC Semiconductor
Product Specification
2SB1603 2SB1603A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High speed switching
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB1603
VCBO
Collector-base voltage
-20
Open base
2SB1603A
VEBO
Emitter-base voltage
V
-50
2SB1603
Collector-emitter voltage
UNIT
-40
Open emitter
2SB1603A
VCEO
MAX
V
-40
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector dissipation
Ta=25
2
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1603 2SB1603A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SB1603
MIN
TYP.
MAX
UNIT
-20
V
IC=-10mA ;IB=0
-40
2SB1603A
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-1A ; VCE=-2V
90
Transition frequency
IC=-0.5A ; VCE=-5V
fT
260
150
MHz
0.3
µs
0.4
µs
0.1
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-2A; IB1=-IB2=-0.2A
Fall time
hFE-2 Classifications
Q
P
90-180
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1603 2SB1603A
SavantIC Semiconductor
Product Specification
2SB1603 2SB1603A
Silicon PNP Power Transistors
4