SAVANTIC 2SB1605A

SavantIC Semiconductor
Product Specification
2SB1605 2SB1605A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Good linearity of hFE
APPLICATIONS
·For low-voltage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB1605
VCBO
Collector-base voltage
-60
Open base
2SB1605A
VEBO
Emitter-base voltage
V
-80
2SB1605
Collector-emitter voltage
UNIT
-60
Open emitter
2SB1605A
VCEO
MAX
V
-80
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector dissipation
Ta=25
2
TC=25
35
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1605 2SB1605A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SB1605
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ;IB=0
V
-80
2SB1605A
Collector-emitter saturation voltage
IC=-3A ;IB=-0.375A
-1.2
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
-1.8
V
ICES
Collector
cut-off current
-200
µA
-300
µA
-1
mA
ICEO
Collector
cut-off current
2SB1605
VCE=-60V; VBE=0
2SB1605A
VCE=-80V; VBE=0
2SB1605
VCE=-30V; IB=0
2SB1605A
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
70
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
Transition frequency
IC=-0.5A ; VCE=-10V
fT
250
30
MHz
0.5
µs
1.2
µs
0.3
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-1A; IB1=-IB2=-0.1A
Fall time
hFE-1 Classifications
Q
P
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1605 2SB1605A
SavantIC Semiconductor
Product Specification
2SB1605 2SB1605A
Silicon PNP Power Transistors
4