SavantIC Semiconductor Product Specification 2SC2244 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Power switching ·Power amplification ·power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A PT Total power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 Tmb=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2SC2244 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; L=25mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=450V; IE=0 TC=125 1 4 mA ICEO Collector cut-off current VCE=400V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=3A ; VCE=5V 1.0 µs 2.0 µs 1.0 µs 400 UNIT V 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ;IB1=- IB2=0.6A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2244