Inchange Semiconductor Product Specification BD175 BD177 BD179 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD176/178 /180 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD175 VCBO VCEO Collector-base voltage Collector-emitter voltage BD177 Open emitter Emitter -base voltage IC 60 BD179 80 BD175 45 BD177 UNIT 45 Open base BD179 VEBO VALUE 60 V V 80 Open collector 5 V Collector current (DC) 3 A ICM Collector current-Peak 7 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD175 BD177 BD179 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=1A; IB=0.1A 0.8 V IC=1A ; VCE=2V 1.3 V BD175 VCEO(SUS) Collector-emitter sustaining voltage BD177 IC=0.1A; IB=0 80 BD175 VCB=45V; IE=0 BD177 VCB=60V; IE=0 BD179 VCB=80V; IE=0 Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=150mA ; VCE=2V 40 hFE-2 DC current gain IC=1A ; VCE=2V 15 Transition frequency IC=250mA; VCE=10V 3 hFE-1 Classifications 6 10 16 40-100 63-160 100-250 V 60 IEBO fT Collector cut-off current TYP. 45 BD179 ICBO MIN ※ classification 16 :only BD175 2 100 μA 1 mA 250 MHz Inchange Semiconductor Product Specification BD175 BD177 BD179 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3