Inchange Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD440,BD442 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO PARAMETER CONDITIONS BD439 Open emitter BD441 VCEO VEBO N A H INC Collector-emitter voltage Emitter -base voltage D N O IC M E S GE Collector-base voltage BD439 VALUE 60 V 80 60 Open base BD441 UNIT V 80 Open collector 5 V IC Collector current (DC) 4 A ICM Collector current-Peak 7 A IB Base current 1 A PC Collector power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBE-1 Base-emitter on voltage IC=10mA ; VCE=5V VBE-2 Base-emitter on voltage IC=2A ; VCE=1V VCEO(SUS) ICBO ICES IEBO hFE-1 Collector-emitter sustaining voltage MIN BD439 VCB=60V; IE=0 BD441 VCB=80V; IE=0 BD439 VCE=60V; VBE=0 BD441 VCE=80V; VBE=0 Transition frequency V V V 100 μA 100 μA R O T UC VEB=5V; IC=0 1 OND BD439 mA 20 IC=10mA ; VCE=5V IC M E ES BD441 G N A CH IN V 80 BD439 DC current gain DC current gain 0.8 60 BD441 体 半导 hFE-3 UNIT IC=0.1A; IB=0 Emitter cut-off current DC current gain MAX 1.5 Collector cut-off current 固电 TYP. 0.58 Collector cut-off current hFE-2 fT CONDITIONS IC=0.5A ; VCE=1V BD439 130 15 40 140 25 IC=2A ; VCE=1V BD441 15 IC=250mA; VCE=1V 2 3 MHz Inchange Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3