Inchange Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type TIP32/32A/32B/32C APPLICATIONS ・Medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) 导体 半 电 SYMBOL PARAMETER 固 VCBO CONDITIONS 40 TIP31A TIP31C VCEO IN TIP31 TIP31A Collector-emitter voltage VEBO Emitter-base voltage IC OND IC M E ES Open emitter TIP31B G N A CH UNIT R O T UC TIP31 Collector-base voltage VALUE 60 V 80 100 40 60 Open base V TIP31B 80 TIP31C 100 Open collector 5 V Collector current (DC) 3 A ICM Collector current-Pulse 5 A IB Base current 1 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICES PARAMETER Collector-emitter sustaining voltage MIN TIP31 40 TIP31A 60 MAX IC=30mA; IB=0 UNIT V TIP31B 80 TIP31C 100 IC=3A IB=0.375A 1.2 V Base-emitter on voltage IC=3A ; VCE=4V 1.8 V 0.2 mA Collector cut-off current TIP31 VCE=40V; VEB=0 TIP31A VCE=60V; VEB=0 导体 半 电 Collector cut-off current TIP31B VCE=80V; VEB=0 TIP31C VCE=100V; VEB=0 TIP31/31A VCE=30V; IB=0 R O T UC D N O IC M E S GE TIP31B/31C N A H C Emitter cut-off current hFE-1 DC current gain IC=1A ; VCE=4V 25 hFE-2 DC current gain IC=3A ; VCE=4V 10 Transiton frequency IC=0.5A ; VCE=10V 3 IN 0.3 mA 1.0 mA VCE=60V; IB=0 IEBO fT TYP. Collector-emitter saturation voltage 固 ICEO CONDITIONS VEB=5V; IC=0 2 50 MHz Inchange Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4