SAVANTIC BU326

SavantIC Semiconductor
Product Specification
BU326 BU326A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage.
APPLICATIONS
·Intended for operating in CTV receiver’s
chopper supplies.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
BU326
VCBO
Collector-base voltage
375
Open base
BU326A
VEBO
V
900
BU326
Collector-emitter voltage
Emitter-base voltage
UNIT
800
Open emitter
BU326A
VCEO
VALUE
V
400
Open collector
10
V
IC
Collector current
6
A
ICM
Collector current-peak
8
A
IB
Base current
3
A
PT
Total power dissipation
75
W
Tj
Junction temperature
-65~200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
2.33
/W
SavantIC Semiconductor
Product Specification
BU326 BU326A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
BU326
MIN
TYP.
MAX
UNIT
375
IC=0.1A; IB=0
BU326A
V
400
VCEsat-1
Collector-emitter saturation voltage
IC=2.5 A;IB=0.5A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A;IB=1.25 A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=2.5 A;IB=0.5A
1.4
V
VBEsat-2
Base-emitter saturation voltage
IC=4A;IB=1.25 A
1.6
V
1
mA
10
mA
ICES
BU326
VCE=800V;VBE=0
BU326A
VCE=900V;VBE=0
Collector cut-off current
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.2A ; VCE=10V; f=1MHz
fT
25
4.0
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.5A ;
IB1=0.5A;IB2=-1A
VCC=250V ;
2
0.5
µs
3.5
µs
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU326 BU326A