SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS BU326 VCBO Collector-base voltage 375 Open base BU326A VEBO V 900 BU326 Collector-emitter voltage Emitter-base voltage UNIT 800 Open emitter BU326A VCEO VALUE V 400 Open collector 10 V IC Collector current 6 A ICM Collector current-peak 8 A IB Base current 3 A PT Total power dissipation 75 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 2.33 /W SavantIC Semiconductor Product Specification BU326 BU326A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU326 MIN TYP. MAX UNIT 375 IC=0.1A; IB=0 BU326A V 400 VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=1.25 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=2.5 A;IB=0.5A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=4A;IB=1.25 A 1.6 V 1 mA 10 mA ICES BU326 VCE=800V;VBE=0 BU326A VCE=900V;VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=10V; IC=0 hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.2A ; VCE=10V; f=1MHz fT 25 4.0 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=2.5A ; IB1=0.5A;IB2=-1A VCC=250V ; 2 0.5 µs 3.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU326 BU326A