SavantIC Semiconductor Product Specification BUX81 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ;fast switching speed ·Low saturation voltage APPLICATIONS ·Switching-mode power supplies ,CRT scanning,inverters,and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 4 A IBM Base current-peak 6 A PT Total power dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BUX81 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V ICES Collector cut-off current VCE=1000V;VBE=0 TC=125 1.0 3.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain IC=1.2A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=10V COB Output capacitance IE=0 ; VCB=20V;f=0.1MHz 450 UNIT V 20 8 MHz 105 pF Switching times ton Turn-on time ts Storage time tf Fall time IC=5A ;IB1=1A; IB2=-2A VCC=250V 2 0.5 µs 3.5 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX81