SAVANTIC BUV42

SavantIC Semiconductor
Product Specification
BUV42
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Fast switching times
·Low collector saturation voltage
APPLICATIONS
·For switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
350
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
12
A
ICM
Collector current-peak
18
A
IB
Base current
2.5
A
IBM
Base current-peak
4
A
PT
Total power dissipation
120
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC.25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.46
UNIT
/W
SavantIC Semiconductor
Product Specification
BUV42
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; L=25mH
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=2A; IB=0.13A
Tj=100
0.8
0.9
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100
0.9
1.2
V
VCEsat-3
Collector-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100
1.2
1.5
V
VBEsat-1
Base-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100
1.3
V
VBEsat-2
Base-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100
1.5
V
ICEV
Collector cut-off current
VCE=VCEV; VBE=-1.5V
TC=100
0.5
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
0.3
0.4
µs
1.0
1.6
µs
0.15
0.3
µs
250
V
7
V
Switching times resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC=6A ;IB1=0.75A
RB2=3.3@; VCC=200V
VBB=-5V; Tp=30µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUV42