SAVANTIC BU931Z

SavantIC Semiconductor
Product Specification
BU931Z
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High breakdown voltage
APPLICATIONS
·Application in high performance
electronic car ignition
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
350
V
VCEO
Collector-emitter voltage
Open base
350
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
20
A
IB
Base current
5
A
PT
Total power dissipation
175
W
Tj
Max.operating junction temperature
Tstg
TC=25
Storage temperature
200
-40~200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
BU931Z
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCL
PARAMETER
CONDITIONS
MIN
TYP.
UNIT
500
V
Clamping voltage
IC=0.1 A ;IB=0
VCE(sat-1)
Collector-emitter saturation voltage
IC=7A ;IB=70mA
1.6
V
VCE(sat-2)
Collector-emitter saturation voltage
IC=8A; IB=100m A
1.8
V
VCE(sat-3)
Collector-emitter saturation voltage
IC=10A; IB=150m A
2.0
V
VBE(sat-1)
Base-emitter saturation voltage
IC=8A; IB=100m A
2.2
V
VBE(sat-2)
Base-emitter saturation voltage
IC=10A; IB=250m A
2.5
V
VBE-1
Base-emitter on voltage
IC=5A ; VCE=2V
1.67
V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=2V
2.0
V
Clamping current
VCE =350V; IB=0
0.25
mA
Collector-emitter off state current
VCC =16V; VBE=300mV
Tj=125
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
mA
hFE
DC current gain
IC=5A ; VCE=2V
VF
Diode forward voltage
IF=10A
2.5
V
ICL
ICE(off)
2
350
MAX
300
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
BU931Z