SavantIC Semiconductor Product Specification BU931Z Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in high performance electronic car ignition PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 5 A PT Total power dissipation 175 W Tj Max.operating junction temperature Tstg TC=25 Storage temperature 200 -40~200 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BU931Z Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specified SYMBOL VCL PARAMETER CONDITIONS MIN TYP. UNIT 500 V Clamping voltage IC=0.1 A ;IB=0 VCE(sat-1) Collector-emitter saturation voltage IC=7A ;IB=70mA 1.6 V VCE(sat-2) Collector-emitter saturation voltage IC=8A; IB=100m A 1.8 V VCE(sat-3) Collector-emitter saturation voltage IC=10A; IB=150m A 2.0 V VBE(sat-1) Base-emitter saturation voltage IC=8A; IB=100m A 2.2 V VBE(sat-2) Base-emitter saturation voltage IC=10A; IB=250m A 2.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=2V 1.67 V VBE-2 Base-emitter on voltage IC=10A ; VCE=2V 2.0 V Clamping current VCE =350V; IB=0 0.25 mA Collector-emitter off state current VCC =16V; VBE=300mV Tj=125 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=5A ; VCE=2V VF Diode forward voltage IF=10A 2.5 V ICL ICE(off) 2 350 MAX 300 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BU931Z