SavantIC Semiconductor Product Specification BUF405AFP Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage,high speed · APPLICATIONS ·Switch mode power supplies ·Motor drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7.5 A ICM Collector current-Peak 15 A IB Base current (DC) 3 A IBM Base current-Peak tp<5ms 4.5 A Ptot Total power dissipation TC=25 39 W Tj Tstg tp<5ms Maximum operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 3.2 UNIT /W SavantIC Semiconductor Product Specification BUF405AFP Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=200mA ; IB=0; L=25mH V(BR)EBO Emitter-base breakdwon voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.25A TC=100 0.8 VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A TC=100 0.5 VBEsat-1 Base-emitter saturation voltage IC=2.5A; IB=0.25A TC=100 0.9 VBEsat-2 Base-emitter saturation voltage IC=5A ;IB=1A TC=100 1.1 ICEV Collector cut-off current VCE=1000V; VBE=-1.5V TC=100 IEBO Emitter cut-off current VEB=5V; IC=0 MAX UNIT 450 V 7 V 2.8 2.0 1.5 1.5 V V V V 100 500 µA 1 mA Switching times inductive load ts Storage time tf Fall time IC=2.5A ;VCC=50V IB1 =0.25A;VBB=-5V ;L=1mH RBB=2.4B;Vclamp=400V 2 0.8 µs 0.05 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUF405AFP