Inchange Semiconductor Product Specification BUF405AFP Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage,high speed APPLICATIONS ・Switch mode power supplies ・Motor drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7.5 A ICM Collector current-Peak 15 A IB Base current (DC) 3 A IBM Base current-Peak tp<5ms 4.5 A Ptot Total power dissipation TC=25℃ 39 W 150 ℃ -65~150 ℃ VALUE UNIT 3.2 ℃/W Tj Tstg tp<5ms Maximum operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUF405AFP Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=200mA ; IB=0; L=25mH V(BR)EBO Emitter-base breakdwon voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.25A TC=100℃ 0.8 VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A TC=100℃ 0.5 VBEsat-1 Base-emitter saturation voltage IC=2.5A; IB=0.25A TC=100℃ 0.9 VBEsat-2 Base-emitter saturation voltage IC=5A ;IB=1A TC=100℃ 1.1 ICEV Collector cut-off current VCE=1000V; VBE=-1.5V TC=100℃ IEBO Emitter cut-off current VEB=5V; IC=0 MAX UNIT 450 V 7 V 2.8 2.0 1.5 1.5 V V V V 100 500 μA 1 mA Switching times inductive load ts Storage time tf Fall time IC=2.5A ;VCC=50V IB1 =0.25A;VBB=-5V ;L=1mH RBB=2.4Ω;Vclamp=400V 2 0.8 μs 0.05 μs Inchange Semiconductor Product Specification BUF405AFP Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3