SavantIC Semiconductor Product Specification S2000AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification S2000AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.1A ; VCE=5V;f=5MHz fT CONDITIONS MIN TYP. MAX UNIT 8 7 MHz 7 µs 0.55 µs Switching times inductive load ts Storage time tf Fall time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3µH 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 S2000AF