SavantIC Semiconductor Product Specification BUV47 BUV47B Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package. ·High voltage. ·Very high switching speed. APPLICATIONS ·Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 9 A ICM Collector current-peak 15 A IB Base current 3 A PC Collector power dissipation 90 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX UNIT 1.38 /W SavantIC Semiconductor Product Specification BUV47 BUV47B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 400 V VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUV47 IC=5A; IB=1A BUV47B IC=6A; IB=1.2A BUV47 IC=8A; IB=2.5A BUV47B IC=9A; IB=3A BUV47 IC=5A; IB=1A BUV47B 1.5 V 3.0 V 1.6 V IC=6A; IB=1.2A ICEX Collector cut-off current VCE=850V ;VBE=-2.5V 0.15 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=10A ; VCE=5V 7 10 14 Switching times : ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=1.0A VCC=150V 2 1.0 µs 3.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BUV47 BUV47B