SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC CONDITIONS BUT11 BUT11A BUT11 BUT11A Open emitter Open base 850 1000 400 450 UNIT V V 7 V Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 2 A 100 W µs Ptot Total power dissipation Open collector VALUE Tmb425 Tf Fall time 0.8 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE UNIT 1.25 K/W SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUT11 MIN TYP. MAX UNIT 400 IC=0.1A; IB=0, L=25mH BUT11A V 450 BUT11 IC=3A; IB=0.6A BUT11A IC=2.5A; IB=0.5A BUT11 IC=3A; IB=0.6A BUT11A IC=2.5A; IB=0.5A 1.5 V 1.3 V ICES Collector cut-off current VCE=Rated VCES ;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT11 IC=3A ;IB1=- IB2=0.6A For BUT11A IC=2.5A; IB1=- IB2=0.5A 1.0 µs 4.0 µs 0.8 µs Switching times inductive load ts Storage time For BUT11 IC=3A ;IB=0.6A 1.4 µs tf Fall time For BUT11A IC=2.5A ;IB =0.5A 0.15 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BUT11 BUT11A