SAVANTIC BUT11A

SavantIC Semiconductor
Product Specification
BUT11 BUT11A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
CONDITIONS
BUT11
BUT11A
BUT11
BUT11A
Open emitter
Open base
850
1000
400
450
UNIT
V
V
7
V
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IB
Base current
2
A
100
W
µs
Ptot
Total power dissipation
Open collector
VALUE
Tmb425
Tf
Fall time
0.8
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
UNIT
1.25
K/W
SavantIC Semiconductor
Product Specification
BUT11 BUT11A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUT11
MIN
TYP.
MAX
UNIT
400
IC=0.1A; IB=0, L=25mH
BUT11A
V
450
BUT11
IC=3A; IB=0.6A
BUT11A
IC=2.5A; IB=0.5A
BUT11
IC=3A; IB=0.6A
BUT11A
IC=2.5A; IB=0.5A
1.5
V
1.3
V
ICES
Collector cut-off current
VCE=Rated VCES ;VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=5mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUT11
IC=3A ;IB1=- IB2=0.6A
For BUT11A
IC=2.5A; IB1=- IB2=0.5A
1.0
µs
4.0
µs
0.8
µs
Switching times inductive load
ts
Storage time
For BUT11
IC=3A ;IB=0.6A
1.4
µs
tf
Fall time
For BUT11A
IC=2.5A ;IB =0.5A
0.15
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
BUT11 BUT11A