SAVANTIC BUT12A

SavantIC Semiconductor
Product Specification
BUT12 BUT12A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
BUT12
BUT12A
BUT12
BUT12A
Open emitter
Open base
Open collector
VALUE
850
1000
400
450
UNIT
V
V
9
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
IBM
Base current-peak
6
a
Ptot
Total power dissipation
100
W
Tmb225
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
UNIT
1
K/W
SavantIC Semiconductor
Product Specification
BUT12 BUT12A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUT12
MIN
TYP.
MAX
400
V
IC=0.1A; IB=0, L=25mH
450
BUT12A
BUT12
UNIT
IC=6A; IB=1.2A
BUT12A
IC=5A; IB=1A
BUT12
IC=6A; IB=1.2A
BUT12A
IC=5A; IB=1A
1.5
V
1.5
V
ICES
Collector cut-off current
VCE=Rated VCES ;VBE=0
Tj=125
1.0
3.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUT12
IC=6A; IB1=- IB2=1.2A
For BUT12A
IC=5A; IB1=- IB2=1A
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
BUT12 BUT12A