SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUT12 BUT12A BUT12 BUT12A Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 6 a Ptot Total power dissipation 100 W Tmb225 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE UNIT 1 K/W SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUT12 MIN TYP. MAX 400 V IC=0.1A; IB=0, L=25mH 450 BUT12A BUT12 UNIT IC=6A; IB=1.2A BUT12A IC=5A; IB=1A BUT12 IC=6A; IB=1.2A BUT12A IC=5A; IB=1A 1.5 V 1.5 V ICES Collector cut-off current VCE=Rated VCES ;VBE=0 Tj=125 1.0 3.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT12 IC=6A; IB1=- IB2=1.2A For BUT12A IC=5A; IB1=- IB2=1A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BUT12 BUT12A