SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching APPLICATIONS ·General purpose switching ·Switch mode power supplies ·Electronic ballasts for fluorescent lighting PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC IB Ptot Tj Tstg CONDITIONS BUV46 Open emitter BUV46A BUV46 VALUE 850 UNIT V 1000 Open base BUV46A 400 V 450 Open collector 7 V Collector current (DC) 5 A Base current 3 A 70 W Total power dissipation TC=25 Max.operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX UNIT 1.76 /W SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUV46 MIN TYP. MAX 400 IC=0.1A ;IB=0 V 450 BUV46A BUV46 IC=2.5A ;IB=0.5A BUV46A IC=2A ;IB=0.4A BUV46 IC=3.5A ;IB=0.7A BUV46A IC=3A ;IB=0.6A BUV46 IC=2.5A; IB=0.5A BUV46A UNIT 1.5 V 5.0 V 1.3 V IC=2A; IB=0.4A ICER Collector cut-off current VCE =VCEX; RBE =10 TC=125 0.1 1.0 mA ICEX Collector cut-off current VCE =VCEX ;VBE = -2.5 V TC=125 0.3 2.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA 1.0 µs 3.0 µs 0.8 µs Switching times ton Turn-on time ts Storage time tf Fall time For BUV46 IC=2.5A;IB1=-IB2=0.5A;VCC=150V For BUV46A IC=2A;IB1=-IB2=0.4A;VCC=150V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUV46 BUV46A