SAVANTIC BUV46A

SavantIC Semiconductor
Product Specification
BUV46 BUV46A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching
APPLICATIONS
·General purpose switching
·Switch mode power supplies
·Electronic ballasts for fluorescent lighting
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
IB
Ptot
Tj
Tstg
CONDITIONS
BUV46
Open emitter
BUV46A
BUV46
VALUE
850
UNIT
V
1000
Open base
BUV46A
400
V
450
Open collector
7
V
Collector current (DC)
5
A
Base current
3
A
70
W
Total power dissipation
TC=25
Max.operating junction temperature
Storage temperature
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
MAX
UNIT
1.76
/W
SavantIC Semiconductor
Product Specification
BUV46 BUV46A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUV46
MIN
TYP.
MAX
400
IC=0.1A ;IB=0
V
450
BUV46A
BUV46
IC=2.5A ;IB=0.5A
BUV46A
IC=2A ;IB=0.4A
BUV46
IC=3.5A ;IB=0.7A
BUV46A
IC=3A ;IB=0.6A
BUV46
IC=2.5A; IB=0.5A
BUV46A
UNIT
1.5
V
5.0
V
1.3
V
IC=2A; IB=0.4A
ICER
Collector cut-off current
VCE =VCEX; RBE =10
TC=125
0.1
1.0
mA
ICEX
Collector cut-off current
VCE =VCEX ;VBE = -2.5 V
TC=125
0.3
2.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
1.0
µs
3.0
µs
0.8
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUV46
IC=2.5A;IB1=-IB2=0.5A;VCC=150V
For BUV46A
IC=2A;IB1=-IB2=0.4A;VCC=150V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
BUV46 BUV46A