SavantIC Semiconductor Product Specification BUX10 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching industrial equipment PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 125 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICM Collector current-peak 30 A IB Base current 5 A PT Total power dissipation 150 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BUX10 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 125 V Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=2 A 1.2 V Base-emitter saturation voltage IC=20 A;IB=2 A 2.0 V ICEX Collector cut-off current VCE=160V;VBE=-1.5V TC=125 1.5 6.0 mA ICEO Collector cut-off current VCE=100V;IB=0 1.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=2V 20 hFE-2 DC current gain IC=20A ; VCE=4V 10 Transition frequency IC=1A ; VCE=15V; f=10MHz 8.0 VEBO VBEsat fT CONDITIONS MIN TYP. MAX UNIT 60 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=20A ;IB1=-IB2=2A VCC=30V 2 0.5 1.5 µs 0.6 1.2 µs 0.15 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX10