SAVANTIC BU426AF

SavantIC Semiconductor
Product Specification
BU426AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed
APPLICATIONS
·Intended for use in switching-mode color
TV supply systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
6
A
ICM
Collector current (Pulse)
8
A
IB
Base current
3
A
PC
Collector power dissipation
65
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
VALUE
2.08
UNIT
/W
SavantIC Semiconductor
Product Specification
BU426AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A; IB=1.25A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.4
V
VBEsat-2
Base-emitter saturation voltage
IC=4A; IB=1.25A
1.6
V
ICES
Collector cut-off current
VCE=900V ;VBE=0
TC=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
10
mA
hFE
DC current gain
IC=0.6A ; VCE=5V
400
UNIT
V
30
60
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2.5A ; VCC=250V
IB1=0.5A
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
2
0.5
µs
3.5
µs
0.5
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
BU426AF