SAVANTIC BUY69A

SavantIC Semiconductor
Product Specification
BUY69A BUY69B BUY69C
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package
·High voltage capability
·
APPLICATIONS
·For horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BUY69A
VCBO
VCEO(SUS)
Collector-base voltage
Collector-emitter
sustaining voltage
BUY69B
Open emitter
Emitter-base voltage
800
BUY69C
500
BUY69A
400
BUY69B
UNIT
1000
Open base
BUY69C
VEBO
VALUE
325
V
V
200
Open collector
8
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
IB
Base current
3.0
A
PD
Total power dissipation
100
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
1.75
/W
SavantIC Semiconductor
Product Specification
BUY69A BUY69B BUY69C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUY69A
VCEO(SUS)
VCBO
Collector-emitter
sustaining voltage
Collector-base voltage
BUY69B
MIN
MAX
UNIT
400
IC=100mA ; IB=0
200
BUY69A
1000
IC=1mA; IE=0
BUY69C
V
325
BUY69C
BUY69B
TYP.
V
800
500
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=2.5A
3.3
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=2.5A
2.2
V
ICES
Collector cut-off current
VCE=rated VCES; VBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
1.0
mA
hFE
DC current gain
IC=2.5A ; VCE=10V
15
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
10
fT
MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=5A ;IB1=-IB2=1.0A; VCC=250V
2
0.3
µs
1.8
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUY69A BUY69B BUY69C