Inchange Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type TIP42/42A/42B/42C APPLICATIONS ・For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO PARAMETER 体 导 半 固电 CONDITIONS TIP41 TIP41A EM S E NG Collector-base voltage A H C IN TIP41B Emitter-base voltage IC 60 V 80 100 TIP41 40 TIP41A UNIT 40 TIP41C Collector-emitter voltage VEBO DUC N O C I Open emitter TOR VALUE 60 Open base V TIP41B 80 TIP41C 100 Open collector 5 V Collector current (DC) 6 A ICM Collector current-Pulse 10 A IB Base current 2 A PC Collector power dissipation TC=25℃ 65 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP41 VCEsat VBE ICES IC=30mA; IB=0 V TIP41B 80 TIP41C 100 IC=6A; IB=0.6A 1.5 V Base-emitter on voltage IC=6A ; VCE=4V 2.0 V TIP41 VCE=40V; VEB=0 TIP41A VCE=60V; VEB=0 Collector cut-off current 体 导 半 C I M E SE TIP41C G N A CH Collector cut-off current IN TOR C U D ON VCE=80V; VEB=0 VCE=100V; VEB=0 TIP41/41A VCE=30V; IB=0 TIP41B/41C VCE=60V; IB=0 Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.3A ; VCE=4V 30 hFE-2 DC current gain IC=3A ; VCE=4V 15 Transiton frequency IC=0.5A ; VCE=10V 3 fT UNIT Collector-emitter saturation voltage 固电 IEBO MAX 60 Collector-emitter sustaining voltage TIP41B ICEO TYP. 40 TIP41A VCEO(SUS) MIN 2 0.4 mA 0.7 mA 1.0 mA 75 MHz Inchange Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC