Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F ・ DESCRIPTION ・With TO-220C package ・Complement to type TIP42D/42E/42F APPLICATIONS ・For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter R O T UC Absolute maximum ratings(Tc=25℃) 体 导 半 SYMBOL VCBO VCEO PARAMETER 固电 CONDITIONS TIP41D EM S E NG Collector-base voltage A H C IN Collector-emitter voltage TIP41E D N O IC Open emitter Emitter-base voltage IC 180 200 TIP41D 120 TIP41E Open base UNIT 160 TIP41F TIP41F VEBO VALUE 140 V V 160 Open collector 5 V Collector current (DC) 6 A ICM Collector current-Pulse 10 A IB Base current 3 A PC Collector power dissipation TC=25℃ 65 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP41D VCEO(SUS) Collector-emitter sustaining voltage TIP41E VBE ICES IEBO hFE-1 hFE-2 fT MAX UNIT IC=30mA; IB=0 V 140 160 Collector-emitter saturation voltage IC=6A; IB=1.5A 1.5 V Base-emitter on voltage IC=6A ; VCE=4V 2.0 V 0.4 mA Collector cut-off current TIP41D VCE=120V; VEB=0 TIP41E VCE=140V; VEB=0 体 导 半 TIP41F ICEO TYP. 120 TIP41F VCEsat MIN 固电 Collector cut-off current Emitter cut-off current R O T UC VCE=160V; VEB=0 D N O IC VCE=90V; IB=0 EM S E NG VEB=5V; IC=0 A H C IN IC=0.3A ; VCE=4V 30 DC current gain IC=3A ; VCE=4V 15 Transiton frequency IC=0.5A ; VCE=10V 3 DC current gain 2 0.7 mA 1.0 mA MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC