SECOS 2SA1036

2SA1036
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
SOT-23
3
Collector
3
1
FEATURES
2
1
A
Base
L
. Large IC, IC MAX.=-500mA
2
3
. Low VCE(Sat), Ideal for low-voltage operation
B S
Top View
1
Emitter
2
. Small Package.
V
G
. RoHS Compliant Product
C
H
D
(MAXIMUM RATINGS* TA=25℃ )
Symbol
Parameter
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
J
K
Dim
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PD
Total Device Dissipation
150
mW
TJ, Tstg
Junction and Storage Temperature
℃
-55~125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
Symbol
Parameter
Test
otherwise
specified)
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100u A,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100 u A,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-1
uA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-1
uA
DC current gain
hFE
VCE=-3V,IC=-10mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
CLASSIFICATION OF
82
390
IC=-100mA,IB=-10mA
VCE=-5V,IC=-20mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
-0.4
200
MHz
7
pF
hFE
P
Q
R
Range
82-180
120-270
180-390
Marking
HP
HQ
HR
Rank
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
V
Any changing of specification will not be informed individual
Page 1 of 2
2SA1036
Elektronische Bauelemente
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
PNP Silicon
General Purpose Transistor
Any changing of specification will not be informed individual
Page 2 of 2