2SA1036 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 Collector 3 1 FEATURES 2 1 A Base L . Large IC, IC MAX.=-500mA 2 3 . Low VCE(Sat), Ideal for low-voltage operation B S Top View 1 Emitter 2 . Small Package. V G . RoHS Compliant Product C H D (MAXIMUM RATINGS* TA=25℃ ) Symbol Parameter Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm J K Dim Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PD Total Device Dissipation 150 mW TJ, Tstg Junction and Storage Temperature ℃ -55~125 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Symbol Parameter Test otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100u A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 uA DC current gain hFE VCE=-3V,IC=-10mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF 82 390 IC=-100mA,IB=-10mA VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz -0.4 200 MHz 7 pF hFE P Q R Range 82-180 120-270 180-390 Marking HP HQ HR Rank http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A V Any changing of specification will not be informed individual Page 1 of 2 2SA1036 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A PNP Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 2 of 2