2SA1037AK PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SC-59 A L FEATURES S n RoHS Compliant Product. n Excellent hFE linearity. n Complments the 2SC2412K. 2 3 Top View Dim Min Max B 1 D G J C K H COLLECTOR MARKING : FP, FQ, FR BASE * A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm EMITTER MAXIMUM RATINGS* TA=25 C unless otherwise noted O Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature ℃ -55~150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 µA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A VCE(sat) Cob 120 560 IC=-50mA,IB=-5mA -0.5 VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz V MHz 140 4 5 pF hFE P 120 - 270 Q R 180 - 390 270 - 560 Any changing of specification will not be informed individual Page 1 of 2 2SA1037AK PNP Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −24.5 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 −0.4 −0.8 −1.2 DC CURRENT GAIN : hFE 25˚C −40˚C 100 50 50 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 −2 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −0.2 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) −0.5 −0.1 −2 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) −1 VCE= −6V −5 −10 −20 −50 −100 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −2 COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −250 −0.05 −0.2 −0.5 −1 01-Jun-2002 Rev. A −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C 200 Ta=25˚C −200 IB=0 −1.6 −2.0 500 100 −60 Fig.2 Grounded emitter output characteristics (I) VCE= −5V −3V −1V 200 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −21.0 −6 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 Ta=25˚C −28.0 −8 BASE TO EMITTER VOLTAGE : VBE (V) 500 −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Page 2 of 2