2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES * Switching and amplification in high voltage 14.3 ±0.2 * Low current(max. 600mA) * High voltage(max.180v) 0.43 +0.08 –0.07 0.46 +0.1 –0.1 (1.27 Typ.) 1: Emitter 2: Base 3: Collector +0.2 1.25–0.2 1 2 3 2.54 ±0.1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Para meter Value Units V VCBO Collector-Base Voltage 180 VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Test conditions V V(BR)CEO* Ic= 1mA, IB=0 160 V V(BR)EBO IE= 10μA, IC=0 6 V Emitter cut-off current IEBO VEB= 4V, IC=0 Transition frequency UNIT 180 VCB= 120V Base-emitter saturation voltage MAX Ic= 100 μA,IE=0 ICBO Collector-emitter saturation voltage TYP V(BR)CBO Collector cut-off current DC current gain MIN IE=0 hFE（1）* VCE= 5 V, IC= 1 mA 80 hFE（2）* VCE= 5 V, IC = 10 mA 80 hFE（3） VCE= 5 V, IC= 50 mA 30 VCEsat* VBEsat* fT 50 nA 50 nA 250 IC= 10 mA, IB= 1 mA 0.15 IC= 50 mA, IB= 5 mA 0.2 IC= 10 mA, IB= 1 mA 1 IC= 50 mA, IB= 5 mA 1 VCE=10V,IC=10 mA,,f=100MHz 100 V V 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Input capacitance Cib 20 pF Noise figure NF VBE=0.5V,IC=0,f=1MHz VCE=5V,Ic=0.25mA, f=1KHZ,Rg=1kΩ 8 dB *Pulse test http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2N5551 Elektronische Bauelemente NPN Silicon General Purpose Transistor ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2