2SA1797 Power Transistor (-50V, -3A) ʳ ϥFeatures 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797. ϥAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V A (DC) A (Pulse) -50 VCBO VCEO VEBO Collector current Limits -50 6 -3 - IC -5 * 1 0.5 Collector power dissipation 2SA1797 Junction temperature Storage temperature 2 *2 PC W 1 *3 150 -55~ 150 Tj Tstg к к *1 Single pulse, Pw=10ms *2 When mounted on a 40x 40x 0.7mm ceramic board. *3 Printed circuit board 1.7mm thick, collector plating 1cф or larger. SOT-89 1:EMITTER ϥPackaging specifications and hFE 2:COLLECTOR 3:BASE Type Package 2SA1797 SOT-89 PQ hFE Marking AG Code T100 Basic ordering unit (Pieces) 1000 *Denotes hF E ϥElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Min. Typ. Max. Unit Conditions V V ICГ-50uA BVCEO -50 -50 BVEBO -6 V IEГ-50uA BVCBO ICГ-1 mA Collector cutoff current ICBO -0.1 µA Emitter cutoff current IEBO -0.1 µA VCBГ-50V VEBГ-5V -0.35 V IC/IBГ-1A/-50mA * VCE/ICГ-2V/-0.5A * Collector-emitter saturation voltage DC current transfer ratio 2SA1797 Transition frequency Output capacitance -0.15 VCE(sat) hFE fT Cob 82 270 200 MHz 36 pF VCEГ-2V, IEГ0.5A, fГ100MHz VCBГ-10V, IEГ0A, f 1MHz Г *Measured using pulse current 1 TYPICAL PERFORMANCE CHARACTERISTICS Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA 0.8 -IB=4mA 12 100 S/ 50 b ite d lim 0 4 8 12 16 4 d -IB=1mA 0 8 ite -IB=2mA 0 20 0 -50 -Collector-Emitter voltage(V) 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 0 50 0 10 10 0 -1 10 -2 10 VCE=5V 2 10 IB=8mA 1 10 0 10 -3 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product 1 10 -2 10 -1 10 10 0 1 10 Ic(max),Pulse Fig.7 DC current gain Ic(max),DC 10 mS 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 200 S 1m 0. 1 10 10 2 10 150 Fig.6 Safe operating area 3 10 IE=0 f=1MHz 100 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 Output Capacitance(pF) lim n -IB=3mA 0.4 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA io at ip ss Di -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) 2