2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics * Low Collector Saturation Voltage, Typically VCE(SAT)=0.5V(Max.) for IC/IB=2A/0.1A 0.36~0.56 0.9~1.1 3.EMITTER Marking: CFQ, CFR, CFS 0.32~0.52 1.5Ref. 0.35~0.44 2.9~3.1 Dimensision in Millimeter o Absolute Maximum Ratings at TA=25 C Symbol Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage 20 Emitter-Base Voltage 6 3 V V A IC PD TJ,Tstg Parameter Collector Current Total Power Dissipation Junction and Storage Temperature mW 500 -55~+150 O C * These rating are limiting vaules above which the serviceability of any semiconductor device may be impaired. o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Symbol BVCBO BVCEO BVEBO I CBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current I EBO *VCE(sat) Emitter-Base Cutoff Current Collector Saturation Voltage *hFE * fT DC Current Gain Gain-Bandwidth Product Cob Output Capacitance *Pulse test: tp 300µS, CLASSIFICATION Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Min 40 20 6 - Typ. - - - 120 - 290 25 Max 0.1 0.1 0.5 560 - Unit V V V uA uA V MH z pF Test Conditions I C=50µA,IE=0 I C=1mA,IB=0 I E=50µA,IC=0 VCB= 30V,IE=0 VEB=5V,IC=0 I C=2A,IB=100mA VCE= 2 V, I C=100mA VCE= 2 V, IC=500mA ,f=100MHz VCB=10V , f=1MHz,IE=0 0.02. OF hFE Q 120~270 R 180~390 S 270~560 Any changing of specification will not be informed individual Page 1 of 2 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente Characteristics Curve 1 0.5 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 6mA 1.2 4mA 0.8 2mA 0.4 0 0 1.4 Ta=100°C 25°C −40°C 1000 500 200 100 50 20 10 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 2000 DC CURRENT GAIN : hFE Fig.2 Grounded emitter propagation characteristics 5000 IC/IB=10 0.5 0.2 Ta=100°C 25°C −40°C 0.1 50m 20m 10m 5m 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 0.5 0.2 Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 5 10 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.5 1 0.1 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Collector-emitter saturation voltage vs. collector current ( ) 5 10 200 100 50 20 10 5 2 1 −1 −2 −5 −10 −20 −50−100 −200−500−1000 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current Ta=25°C 35mA 30mA 25mA 20mA 4 15mA 3 10mA 2 5mA 1 IB=0A 0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 1 Grounded emitter output characteristics ( ) lC/lB=20 0.5 Ta=100°C 25°C −40°C 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Ta=25°C VCE=2V 500 COLLECTOR CURRENT : IC (A) Fig.7 IB=0A 1.0 50mA 45mA 40mA COLLECTOR CURRENT : IC (A) IC/IB=20 50m 0.8 1 DC current gain vs. collector current 2 0.6 Grounded emitter output characteristics ( ) 2 COLLECTOR CURRENT : IC (A) Fig.4 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 0.2 5 COLLECTOR CURRENT : IC (A) 2 Ta=25°C 12mA 10mA 8mA 20mA 18mA 16mA 14mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 VCE=2V 5 Collector-emitter saturation voltage vs. collector curren ( ) 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10 Ta=25°C f=1MHz IE=0A IC=0A 500 Cob 200 100 Cob 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Any changing of specification will not be informed individual Page 2 of 2