SECOS BC637

BC635 / BC637 / BC639
NPN Type
Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURE
High current transistor
3.5±0.2
14.3±0.2
4.5±0.2
4.55±0.2
0.43+0.08
–0.07
0.46+0.1
–0.1
(1.27 Typ.)
1: Emitter
+0.2
1.25–0.2
2: Collector
1 2 3
3: Base
2.54±0.1
MAXIMUM RATINGS (TA=25 C unless otherwise specified)
o
PARAMETERS
SYMBOLS
VALUES
UNIT
VCEO
45
V
BC637
60
V
BC639
80
V
45
V
BC637
60
V
BC639
100
V
VEBO
5
V
IC
PC
1
A
0.625
W
TJ,TSTG
150, -65 ~ 150
BC635
Collector - Emitter Voltage
VCBO
BC635
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
C
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)
o
PARAMETERS
Collector - emitter breakdown voltage
o
SYMBOL
V(BR)CEO
TEST CONDITIONS
IC=10mA, IB=0
BC635
BC637
BC639
Collector cut-off current
I CBO
VCB=30V, IE=0
Emitter cut-off current
I EBO
hFE(1)
VEB=5V, IB=0
VCE=2V, IC=5mA
hFE(2)
VCE=2V, IC=150mA
DC current gain
Base - emitter voltage
Transition frequency
BC635
BC637-10/BC639-10
VBE
BC637-16/BC639-16
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
fT
VCE=5V, IC=10mA, f=50MHz
hFE(3)
Collector - emitter saturation voltage
MIN
VCE(sat)
TYP
MAX
UNIT
0.1
0.1
V
V
V
µA
µA
45
60
80
25
40
63
100
25
250
160
250
0.5
1
100
V
V
MHz
CLASSIFICATION OF h FE(2)
RANK
BC635
BC637-10, BC639-10
BC637-16, BC639-16
RANGE
40-250
63-160
100-250
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BC635 / BC637 / BC639
Elektronische Bauelemente
NPN Type
Plastic Encapsulated Transistor
Typical Characteristics
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2