BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1 –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Collector 1 2 3 3: Base 2.54±0.1 MAXIMUM RATINGS (TA=25 C unless otherwise specified) o PARAMETERS SYMBOLS VALUES UNIT VCEO 45 V BC637 60 V BC639 80 V 45 V BC637 60 V BC639 100 V VEBO 5 V IC PC 1 A 0.625 W TJ,TSTG 150, -65 ~ 150 BC635 Collector - Emitter Voltage VCBO BC635 Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature C o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) o PARAMETERS Collector - emitter breakdown voltage o SYMBOL V(BR)CEO TEST CONDITIONS IC=10mA, IB=0 BC635 BC637 BC639 Collector cut-off current I CBO VCB=30V, IE=0 Emitter cut-off current I EBO hFE(1) VEB=5V, IB=0 VCE=2V, IC=5mA hFE(2) VCE=2V, IC=150mA DC current gain Base - emitter voltage Transition frequency BC635 BC637-10/BC639-10 VBE BC637-16/BC639-16 VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA fT VCE=5V, IC=10mA, f=50MHz hFE(3) Collector - emitter saturation voltage MIN VCE(sat) TYP MAX UNIT 0.1 0.1 V V V µA µA 45 60 80 25 40 63 100 25 250 160 250 0.5 1 100 V V MHz CLASSIFICATION OF h FE(2) RANK BC635 BC637-10, BC639-10 BC637-16, BC639-16 RANGE 40-250 63-160 100-250 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BC635 / BC637 / BC639 Elektronische Bauelemente NPN Type Plastic Encapsulated Transistor Typical Characteristics Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2