SECOS BC636

BC636/638/640
PNP Type
Elektronische Bauelemente
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURE
3.5±0.2
4.55±0.2
14.3±0.2
4.5±0.2
Power Dissipation:
PCM: 0.83 mW (Tamb=25oC)
0.43+0.08
–0.07
0.46+0.1
–0.1
(1.27 Typ.)
1: Emitter
+0.2
1.25–0.2
2: Collector
1 2 3
3: Base
2.54±0.1
o
MAXIMUM RATINGS (TA=25 C unless otherwise specified)
PARAMETERS
Collector - Emitter Voltage
Collector - Base Voltage
SYMBOLS
VALUES
UNIT
VCEO
BC636
-45
V
BC638
-60
V
BC640
-80
V
-45
V
-60
V
VCBO
BC636
BC638
-100
V
VEBO
-5
V
IC
ICP
IB
-1
-1.5
A
TJ,TSTG
150, -65 ~ 150
RθJA*
150
BC640
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance from Junction to Ambient
A
mA
100
o
C
K/w
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)
PARAMETERS
SYMBOL
TEST CONDITIONS
IC=10mA, IB=0
Collector - emitter breakdown voltage
MIN
BC638
BC640
Collector cut-off current
I CBO
VCB=-30V, IE=0
Emitter cut-off current
I EBO
hFE(1)
VEB=-5V, IB=0
VCE=-2V, IC=-5mA
hFE(2)
VCE=-2V, IC=-150mA BC636-10
DC current gain
BC636-16, BC638-16, BC640-16
hFE(3)
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
VCE(sat)
VBE(ON)
fT
VCE=-2V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-2V, IC=-500mA
VCE=-5V, IC=-50mA, f=100MHz
MAX
UNIT
-0.1
-0.1
V
V
V
µA
µA
-45
-60
-80
BC636
V(BR)CEO
TYP
40
63
100
25
160
250
-0.5
-1
100
V
V
MHz
CLASSIFICATION OF h FE(2)
RANK
BC636-10
BC636-16, BC638-16, BC640-16
RANGE
63-160
100-250
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
BC636/638/640
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
TYPICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individu
Page 2of 2