SGM2301
-2.6A, -20V,RDS(ON) 130m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-89
Description
The SGM2301 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness. The SGM2301 is universally
preferred for all commercial-industrial surface mount
applications and suited for low voltage applications
such as DC/DC converters.
Features
* Surface Mount Device
* Simple Drive Requirement
REF.
A
B
C
D
E
F
D
G
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
3
Ratings
Unit
VDS
-20
V
VGS
±12
V
o
-2.6
A
o
ID@TA=70 C
-2.1
A
IDM
-10
A
PD@TA=25 oC
1.38
W
0.01
W/ C
ID@TA=25 C
3
1,2
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SGM2301
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
2
Symbol
Min.
BVDSS
-20
_
_
V
BVDS/ Tj
_
-0.1
_
V/ C
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
130
IDSS
RDS(ON)
_
190
5.2
10
1.36
_
0.6
_
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
5.2
_
Tr
_
9.7
_
Td(Off)
_
19
_
Tf
_
29
_
_
295
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
Td(ON)
Ciss
Output Capacitance
Max.
_
Total Gate Charge
2
Typ.
_
Crss
_
Gfs
_
Unit
o
mΩ
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=-1mA
VGS=-5.0V, ID=-2.8A
VGS=-2.8V, ID=-2A
nC
ID=-2.8A
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6Ω
RD=15Ω
_
170
_
65
_
4.4
_
pF
VGS=0V
VDS=-6V
S
VDS=-5V, ID=-2.8A
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
2
VSD
Continuous Source Current (Body Diode)
Is
Forward On Voltage
Pulsed Source Current (Body Diode)
1
ISM
Min.
Typ.
_
_
_
_
_
_
Max.
Unit
-1.2
V
-1
A
-10
A
Test Condition
IS=-1.6A, VGS=0V.
VD=VG=0V, VS=-1.2V
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SGM2301
Elektronische Bauelemente
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
http://www.SeCoSGmbH.com/
Reverse Diode
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SGM2301
Elektronische Bauelemente
-2.6A, -20V,RDS(ON) 130mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4