SECOS STT8205S

STT8205S
6 A, 20V,RDS(ON) 28mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT8205S provide the designer with best combination of fast
switching, low on-resistance and cost-effectiveness.
The TSSOP-6 package is universally used for all commercialindustrial surface mount applications.
Features
* Low Drive Current
* Low On-Resistance
* Capable of 2.5V Gate Drive
D1
D2
D1
S1
D2
6
5
4
REF.
A
A1
A2
c
D
E
E1
8205S
Date Code
G2
G1
S2
S1
1
2
3
G1
S2
G2
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Symbol
V
±8
V
6
A
ID@TA=70 C
4.8
A
IDM
20
A
1.14
W
VGS
Gate-Source Voltage
3
Continuous Drain Current,[email protected]
3
Continuous Drain Current,[email protected]
Pulsed Drain Current 1
Total Power Dissipation
o
ID@TA=25 C
o
o
PD@TA=25 C
0.01
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
20
VDS
Drain-Source Voltage
Ratings
Tj, Tstg
o
W/ C
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
110
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
STT8205S
6 A, 20V,RDS(ON) 28mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
Test Condition
BVDSS
20
_
_
V
VGS=0V, ID= 250uA
BVDS/ Tj
_
0.03
_
V/ oC
VGS(th)
0.5
_
1.5
V
VDS=VGS, ID=250uA
IGSS
_
_
± 100
uA
VGS=± 8V
_
_
1
uA
VDS=20V,VGS=0
_
_
25
uA
VDS= 16V,VGS=0
_
_
28
IDSS
RDS(ON)
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Forward Transconductance
_
4.5
_
7
_
30
_
70
_
_
Tr
_
Td(Off)
_
Tf
_
65
_
_
1035
_
320
_
150
_
Coss
Reverse Transfer Capacitance
38
23
_
40
VGS=4.5 V, ID=6A
mΩ
Td(ON)
Ciss
Output Capacitance
_
_
_
Reference to 25oC ,ID= 1mA
nC
VGS=2.5V, ID=5.2 A
ID=6 A
VDS=20V
VGS=5V
VDD= 10V
ID= 1 A
nS
VGS=5 V
RG=6 Ω
RD=10 Ω
pF
VGS=0V
VDS=20V
S
VDS=10V, ID=6 A
Crss
_
Gfs
_
20
_
Symbol
Min.
Typ.
Max.
Unit
_
_
1.2
V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VS D
Test Condition
IS=1.7
A , VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
STT8205S
Elektronische Bauelemente
6 A, 20V,RDS(ON) 28mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. RDSON v.s. Junction Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
STT8205S
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
6 A, 20V,RDS(ON) 28mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 o f 4