STT8205S 6 A, 20V,RDS(ON) 28mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercialindustrial surface mount applications. Features * Low Drive Current * Low On-Resistance * Capable of 2.5V Gate Drive D1 D2 D1 S1 D2 6 5 4 REF. A A1 A2 c D E E1 8205S Date Code G2 G1 S2 S1 1 2 3 G1 S2 G2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Symbol V ±8 V 6 A ID@TA=70 C 4.8 A IDM 20 A 1.14 W VGS Gate-Source Voltage 3 Continuous Drain Current,[email protected] 3 Continuous Drain Current,[email protected] Pulsed Drain Current 1 Total Power Dissipation o ID@TA=25 C o o PD@TA=25 C 0.01 Linear Derating Factor Operating Junction and Storage Temperature Range Unit 20 VDS Drain-Source Voltage Ratings Tj, Tstg o W/ C o C -55~+150 Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol Rthj-a Ratings 110 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 STT8205S 6 A, 20V,RDS(ON) 28mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) o Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 Symbol Min. Typ. Max. Unit Test Condition BVDSS 20 _ _ V VGS=0V, ID= 250uA BVDS/ Tj _ 0.03 _ V/ oC VGS(th) 0.5 _ 1.5 V VDS=VGS, ID=250uA IGSS _ _ ± 100 uA VGS=± 8V _ _ 1 uA VDS=20V,VGS=0 _ _ 25 uA VDS= 16V,VGS=0 _ _ 28 IDSS RDS(ON) _ Total Gate Charge 2 Qg _ Gate-Source Charge Qgs _ Gate-Drain ("Miller") Charge Qgd Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Forward Transconductance _ 4.5 _ 7 _ 30 _ 70 _ _ Tr _ Td(Off) _ Tf _ 65 _ _ 1035 _ 320 _ 150 _ Coss Reverse Transfer Capacitance 38 23 _ 40 VGS=4.5 V, ID=6A mΩ Td(ON) Ciss Output Capacitance _ _ _ Reference to 25oC ,ID= 1mA nC VGS=2.5V, ID=5.2 A ID=6 A VDS=20V VGS=5V VDD= 10V ID= 1 A nS VGS=5 V RG=6 Ω RD=10 Ω pF VGS=0V VDS=20V S VDS=10V, ID=6 A Crss _ Gfs _ 20 _ Symbol Min. Typ. Max. Unit _ _ 1.2 V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 VS D Test Condition IS=1.7 A , VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 2 3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 STT8205S Elektronische Bauelemente 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Any changing of specification will not be informed individual Page 3 of 4 STT8205S Elektronische Bauelemente Fig 7. Gate Charge Characteristics 6 A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics 180 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 o f 4