SMG2313 -2.5A, -20V,RDS(ON) 160mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A L The SMG2313 provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SMG231 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters. S 2 3 Top View B 1 D G J C Features K H Drain * Small Package Outline * Simple Drive Requirement Gate D Source Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking: 2313 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -20 12 -2.5 -1.97 10 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 SMG2313 -2.5A,-20V,RDS(ON) 160mΩ Elektronische Bauelemente Electrical Characteristics(Tj = 25 Parameter P-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.01 - Gate Threshold Voltage VGS(th) - - -1.2 V VDS=VGS, ID=-250uA gfs - 4.0 - S VDS=-5V, ID=-2A IGSS - - 100 nA VGS= - - -1 uA VDS=-20V, VGS=0 - - -25 uA VDS=-16V, VGS=0 - - 120 - - 160 - - 300 Qg - 5 8 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 6 - Tr - 17 - Td(off) - 16 - Tf - 5 - Input Capacitance Ciss - 270 430 Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 55 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time2 Trr - 20 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-2A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance Total Gate Charge2 Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) Test Conditions VGS=0, ID=-250uA V/ Reference to 25 , ID=-1mA 12V VGS=-10V, ID=-2.8A m VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A nC ID=-2A VDS=-16V VGS=-4.5V ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 270 /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2313 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3of 4 SMG2313 Elektronische Bauelemente -2.5A,-20V,RDS(ON) 160mΩ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4