SMG702K 640mA, 60V,RDS(ON) 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A L Description SC-59 The SMG702K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG702K is universally used for all commercial-industrial applications S 2 3 Top View B 1 D G J C Features K H * Simple Drive Requirement * RoHS Compliant Product * Small Package Outline D Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G Drain Gate Source S Marking : 702E Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current , VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 60 20 640 500 950 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Unit /W Any changing of specification will not be informed individual Page 1 of 4 SMG702K 640mA, 60V,RDS(ON) 2Ω Elektronische Bauelemente Electrical Characteristics(Tj = 25 Parameter N-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.06 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 600 - mS VDS=10V, ID=600mA IGSS - - 10 uA VGS= - - 1 uA VDS=60V, VGS=0 - - 100 uA VDS=48V, VGS=0 - - 2 VGS=10V, ID=500mA - - 4 VGS=4.5V, ID=200mA Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ Total Gate Charge2 Qg - 1 1.6 Gate-Source Charge Qgs - 0.5 - Gate-Drain (“Miller”) Change Qgd - 0.5 - Td(on) - 12 - Tr - 10 - Td(off) - 56 - Tf - 29 - Ciss - 32 50 Output Capacitance Coss - 8 - Reverse Transfer Capacitance Crss - 6 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 20V nC ID=600mA VDS=50V VGS=4.5V ns VDS=30V ID=600mA VGS=10V RG=3.3 RD=52 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=200mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2of 4 SMG702K Elektronische Bauelemente 640mA, 60V,RDS(ON) 2Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3of 4 SMG702K Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 640mA, 60V,RDS(ON) 2Ω Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4of 4