SSG9960
7.8A, 40V,RDS(ON) 20mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
45
The SSG9960 provide the designer with the best combination of fast switching,
o
0.375 REF
6.20
5.80
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
0.25
3.80
4.00
1.27Typ.
0.35
0.49
4.80
5.00
0.100.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Low on-resistance
* Fast switching speed
Date Code
D1
D1
D2
D2
8
7
6
5
D1
D2
9960SS
G2
G1
1
2
3
4
S1
G1
S2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
7.8
A
o
6.2
A
20
A
2
W
0.016
W / oC
IDM
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
V
V
ID@TA=70 C
1
40
±20
ID@TA=25 C
3
Unit
o
VGS
3
Ratings
Tj, Tstg
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 5
SSG9960
7.8A, 40V,RDS(ON) 20mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
40
_
_
V
BVDS/ Tj
_
0.032
_
V/ C
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
1
uA
VDS=40V,VGS=0
_
_
25
uA
VDS=32V,VGS=0
_
_
20
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
_
_
Qg
_
14.7
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Forward Transconductance
7.1
_
6.8
_
11.5
_
Tr
_
6.3
_
Td(Off)
_
28.2
_
Tf
_
12.6
_
_
1725
Coss
VGS=0V, ID=250uA
o
Reference to 25 C,ID=1mA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
_
_
_
mΩ
32
Td(ON)
Ciss
Output Capacitance
_
o
Test Condition
nC
ID=7A
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=20Ω
_
235
_
145
_
pF
Crss
_
Gfs
_
25
_
S
Symbol
Min.
Typ.
Max.
Unit
_
_
1.3
V
_
_
2.3
A
20
A
VGS=0V
VDS=25V
f=1.0MHz
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward On Voltage
2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
VSD
Is
ISM
_
_
Test Condition
IS=2.3A, VGS=0V.
VD=VG=0V, VS=1.3V
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; t ≦10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
SSG9960
Elektronische Bauelemente
7.8A, 40V,RDS(ON) 20mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 5
SSG9960
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
7.8A, 40V,RDS(ON) 20m Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 5
SSG9960
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
7.8A, 40V,RDS(ON) 20mΩ
Any changing of specification will not be informed individual
Page 5 of 5