SSD01L60
1A, 600V,RDS(ON)12Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Description
TO-252
The SSD01L60 (TO-252) is universally preferred for all
commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
* RoHs Compliant
* Simple Drive Requirement
* Fast Switching Speed
* Repetitive Avalanche Rated
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Ratings
Unit
600
V
±30
V
1
A
ID@TC=100C
0.8
A
IDM
3
A
29
W
0.232
W/ C
EAS
0.5
mJ
Avalanche Current
I AR
1
A
Repetitive Avalanche Energy
EAR
0.5
mJ
Tj, Tstg
-55~+150
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
Continuous Drain Current,VGS@10V
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Operating Junction and Storage Temperature Range
o
o
C
Thermal Data
Parameter
Symbol
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Ratings
Unit
4.3
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSD01L60
1A, 600V,RDS(ON)12Ω
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
600
_
_
V
BVDS/ Tj
_
0.8
_
V/ C
VGS(th)
2.0
_
4.0
V
IGSS
_
_
±100
nA
VGS=± 30V
_
_
10
uA
VDS=60 0V,VGS=0
_
_
100
uA
VDS=480 V,VGS=0
_
_
12
Ω
VGS=10V, ID=0.5A
S
VDS=10V, ID=0.5A
nC
ID=1 A
VDS=480V
VGS= 10V
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
3
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Max.
Forward Transconductance
Gfs
_
0.8
_
Total Gate Charge3
Qg
_
4
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Symbol
Min.
1
_
1.1
_
6.6
_
5
_
11.7
_
9.2
_
170
30.7
5.1
Unit
o
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VDD=300V
ID=1 A
nS
VGS=10V
RG=3.3Ω
RD=300 Ω
_
_
pF
VGS=0V
VDS=25V
f=1.0MHz
_
Source-Drain Diode
Parameter
Typ.
Max.
Unit
1.2
V
IS=1A, VGS=0V.Tj=25C
VD=VG=0V,VS=1.2 V
Forward On Voltage 3
VSD
_
_
Continuous Source Current(Body Diode)
IS
_
_
1
A
_
_
5
A
1
Pulsed Source Current(Body Diode)
ISM
Test Condition
o
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.0A.
3. Pulse width 300us, duty cycle 2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSD01L60
Elektronische Bauelemente
1A, 600V,RDS(ON)12Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSD01L60
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
1A, 600V,RDS(ON)12Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4