2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045) 4 3 1.65 (0.065) 1.40 (0.055) FEATURES • AVALANCHE ENERGY RATING 0.76 (0.030) 0.51 (0.020) 0.33 (0.013) Rad. 0.08 (0.003) • SIMPLE DRIVE REQUIREMENTS • HERMETICALLY SEALED CERAMIC SURFACE MOUNT 0.43 (0.017) 0.18 (0.007 Rad. APPLICATIONS LCC4 Ceramic Package DSCC Package (U5) • FAST SWITCHING Underside View • POWER SUPPLIES GATE DRAIN SOURCE • MOTOR CONTROLS Pins 4,5 Pins1,2,15,16,17,18 Pins 6,7,8,9,10,11,12,13 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain Source Voltage 100V ID @Tcase = 25°C ID @Tcase = 100°C Continuous Drain Current 4.5A 3.0A IDM Continuous Drain Current Pulsed Drain Current 1 VGS Gate Source Voltage ±20V PD@ Tcase = 25°C Maximum Power Dissipation 14W RθJ-C TJ,Tstg Thermal Resistance Junction To Case Lead Temperature ( 1 ” from case for 10 secs) Operating and Storage Temperature Range 16 18A 9.1°C/W -55 to +150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5652 Issue 1 2N6788LCC4 IRFE120 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1.0mA 100 VGS(th)* Gate Threshold Voltage VDS = VGS ID = 250μA 2.0 V 4.0 IGSSF Gate Body Leakage Forward VGS = 20V 100 IGSSR Gate Body Leakage Reverse VGS = -20V -100 IDSS Zero Gate Voltage Drain Current VGS =0 25 TC = 125°C 250 VGS = 10V ID = 3.0A 0.30 Resistance VGS = 10V ID = 4.5A 0.345 Forward Transconductance VDS = 15V IDS = 3.0A VDS = 25V RDS(on)* Static Drain Source On-State gfs* VDS = 80V. 1.5 nA μA Ω Ω S( ) DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 Coss Output Capacitance f = 1MHz Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time VDD = 50V ID = 4.5A 40 tr Rise Time RG = 7.5Ω VGS = 10V 70 td(off) Turn–Off Delay Time (MOSFET switching times are essentially 40 tf Fall Time independent of operating temperature.) 70 Qg Qgs Total Gate Charge VGS = 10V 17 Gate To Source Charge VDS = 50V Qgd Gate To Drain (“Miller”) Charge IS 350 pF 150 24 ID = 4.5A 4.0 ns nC 7.7 BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current (Body 4.5 Diode) symbol showing the intergal ISM Source Current (Body Diode) P-N junction rectifier. VSD Diode Forward Voltage* trr Reverse Recovery Time IF = 4.5A QRR Reverse Recovery Charge di / dt = 100A/μs VDD = 50V IS = 4.5A V , / A 5 VGS = 0 TJ = 25°C TJ = 25°C 18 1.8 V 240 ns 2.0 μC Notes * Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5652 Issue 1