MICROSEMI UPF1N100

580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
UPF1N100
Features
•
•
•
•
•
•
•
Rugged POWERMITE 3
 Surface Mount Package
Low On-State Resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra Low Leakage current
UIS rated
Available with Lot Acceptance Testing
SURFACE MOUNT
N – CHANNEL
MOSFET
Description
This device is an N-Channel enhancement mode, high density MOSFET.
It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three
leaded package.
Maximum Ratings
PARAMETER
SYMBOL
VALUE
1000
Drain-to-Source Voltage
VDSS
VGS
+/- 20
Gate- to -Source Voltage
Continuous Drain Current @ TC = 25°°C
ID1
1.0
Continuous Drain Current @ TC=100°°C
ID2
0.27
1.0
Avalanche Current
IAR
3.5
Repetitive Avalanche Energy
EAR
120
Single Pulse Avalanche Energy
EAS
Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125
Steady-state Thermal Resistance, Junction-to-Tab Rθ
2.5
θJ-TAB
UNIT
Volts
Volts
Amps
Amps
Amps
mJ
mJ
°C
°C/Watt
Static Electrical Characteristics
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IGSS1
IGSS2
IGSS3
MSC 04-28-00
PRELIMINARY
CHARACTERISTICS / TEST CONDITIONS
Drain to Source Breakdown Voltage
(VGS=0V, ID=0.25mA)
Gate Threshold Voltage
(VGS=VDS, ID=1mA, TJ=37°°C )
Gate Threshold Voltage
(VGS=VDS, ID=1mA, TJ=25°°C )
Drain to Source ON-State Resistance
(VGS=10V, ID=ID 1 , TJ=25°°C )
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37°°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=25°°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=60°°C)
Drain to Source ON-State Resistance
(VGS=7V, ID=ID 1 , TJ=125°°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25°°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125°°C )
Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 25°°C )
Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 37°°C )
Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ=125°°C )
MIN
1000
2
TYP
3.4
3.5
12.5
12.5
11.5
15.0
25.5
MAX
4.5
13.5
25
250
±100
10.0
25
UNIT
Volts
Volts
Volts
Ohms
Ohms
Ohms
Ohms
Ohms
uA
uA
nA
nA
uA
UPF1N100
Dynamic Electrical Characteristics
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td
tf
td (on)
tr
td (off)
tf
VSD
t rr
Qrr
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CONDITIONS
VGS= 0 V
VDS= 25 V
f = 1MHZ
VGS= 10 V
VDS= 0.5 VDSS
IC= 20 mA
Resistive Switching (25°°C)
VGS= 10 V, VDS= 0.5 BVDSS
ID = 20 mA
Rg = 1.6 Ω
Resistive Switching (25°°C)
VGS= 10 V, VDS= 0.5 BVDSS
ID = 100 mA
Rg = 1.6 Ω
VGS= 0 V, IS = 1 A, TJ = 37°°C
IS = 1 A, dIs/dt = 100 A/us
IS = 1 A, dIs/dt = 100 A/us
MECHANICAL SPECIFICATIONS
MSC 04-28-00
PRELIMINARY
MIN
TYP
290
36
15
20
1.0
10
6.3
5.9
315
2.6
6.3
5.8
76
470
0.825
121
0.415
MAX
375
50
30
1.0
300
0.8
UNIT
pF
pF
pF
nC
nC
nC
ns
ns
ns
us
ns
ns
ns
ns
V
ns
uC