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05-09-2006 SEN
© by SEMIKRON
SKM 300GB063D
Characteristics
Symbol Conditions
Inverse Diode
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Superfast IGBT Modules
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
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05-09-2006 SEN
© by SEMIKRON
SKM 300GB063D
Zth
Symbol
Zth(j-c)l
Conditions
Values
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Features
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05-09-2006 SEN
© by SEMIKRON
SKM 300GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
05-09-2006 SEN
© by SEMIKRON
SKM 300GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
05-09-2006 SEN
© by SEMIKRON
SKM 300GB063D
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