MMBTSC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 50 mA Emitter Current -IE 50 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz Collector Base Time Constant at VCE = 10 V, -IE = 1 mA, f = 30 MHz Power Gain at VCC = 6 V, f = 10.7 MHz, -IE = 1 mA R O Y Symbol Min. Typ. Max. Unit hFE hFE hFE 40 70 120 - 80 140 240 - ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.4 V VBE(sat) - - 1 V fT 100 - 400 MHz Cob 1.4 2 3.2 pF Cc,rbb’ 10 - 50 ps Gpe 27 29 33 dB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/05/2006 MMBTSC380 Ic[mA], COLLECTOR CURRENT 10 1000 I B =90 A VCE=12V I B =80 A 8 6 h FE , DC CURRENT GAIN I B =70 A I B =60 A I B =50 A 4 I B =40 A I B =30 A 2 I B =20 A I B =10 A 100 0 0 2 4 6 8 10 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) VCE(sat) 0.1 0.01 0.1 1 24 20 16 12 8 4 0 10 VCE=12V 28 0 0.2 Ic[mA], COLLECTOR CURRENT 0.6 0.8 1.0 1.2 f=1MHz I E =0 1 0.1 100 Figure 4. Base-Emitter On Voltage fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT Cob [ pF ] , CAPACITANCE 10 10 0.4 VBE [V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage 1 100 32 Ic=10I B 1 10 Figure 2. DC Current Gain Ic[mA], COLLECTOR CURRENT VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE Figure 1. Static Characteristic 10 1 I C[mA], COLLECTOR CURRENT 1000 VCE=10V 100 10 VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance 1 10 I C[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/05/2006