MMBTSC1009 NPN Silicon Epitaxial Transistor FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Voltage at VCE = 6 V, IC = 1 mA Emitter Cutoff Current at VEB = 5 V Collector Cutoff Current at VCB = 50 V Gain Bandwidth Product at VCE = 6 V, -IE = 1 mA Output Capacitance at VCB = 6 V, f = 1 MHz Collector Base Time Constant at VCB = 6 V, f = 31.9 MHz, -IE = 10 mA Noise Figure at VCE = 6 V, -IE = 1 mA. f = 1 MHz, RG = 500 Ω O Y Symbol Min. Typ. Max. Unit hFE hFE 60 90 - 120 180 - VCE(sat) - - 0.3 V VBE 0.65 - 0.75 V IEBO - - 0.1 µA ICBO - - 0.1 µA fT 150 250 - MHz Cob - 1.9 2.2 pF Cc.rb’b - 10 15 ns NF - 2 4 dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 21/12/2005