SEMTECH_ELEC MMBTSC1009

MMBTSC1009
NPN Silicon Epitaxial Transistor
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
50
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
50
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Voltage
at VCE = 6 V, IC = 1 mA
Emitter Cutoff Current
at VEB = 5 V
Collector Cutoff Current
at VCB = 50 V
Gain Bandwidth Product
at VCE = 6 V, -IE = 1 mA
Output Capacitance
at VCB = 6 V, f = 1 MHz
Collector Base Time Constant
at VCB = 6 V, f = 31.9 MHz, -IE = 10 mA
Noise Figure
at VCE = 6 V, -IE = 1 mA. f = 1 MHz, RG = 500 Ω
O
Y
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
60
90
-
120
180
-
VCE(sat)
-
-
0.3
V
VBE
0.65
-
0.75
V
IEBO
-
-
0.1
µA
ICBO
-
-
0.1
µA
fT
150
250
-
MHz
Cob
-
1.9
2.2
pF
Cc.rb’b
-
10
15
ns
NF
-
2
4
dB
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/12/2005