MMBTSC5065 NPN Silicon Epitaxial Planar Transistor for low noise, high gain amplifier at VHF~UHF band. The transistor is subdivided into two groups O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Base Current IB 15 mA Collector Current IC 30 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC5065 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 80 - 160 - Y hFE 120 - 240 - ICBO - - 1 µA IEBO - - 1 µA fT 5 7 - GHz 1) Cre - 0.45 0.9 pF 1) Cob - 0.7 - pF DC Current Gain at VCE=5V, IC=10mA Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=1.0V Transition Frequency at VCE=5V, IC=10mA Reverse Transfer Capacitance at VCB=5V, f=1MHz Output Capacitance at VCB=5V, f=1MHz Insertion Gain at VCE=5V, IC=10mA, f=500MHz S21e 2 1 - 17 - dB S21e 2 2 8.5 12 - dB NF1 - 1 - dB NF2 - 1.1 2 dB Insertion Gain at VCE=5V, IC=10mA, f=1.0GHz Noise Figure at VCE=5V, IC=3mA, f=500MHz Noise Figure at VCE=5V, IC=3mA, f=1.0GHz 1) Cre is measured by 3 terminal method with capacitance bridge. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005