TI FX033Z

TPS51363
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SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
22-V Input, 8-A or 10-A Converter
With Integrated FET
Check for Samples: TPS51363
FEATURES
DESCRIPTION
•
•
•
The TPS51363 is a high-voltage input, synchronous
converter with integrated FET, based on D-CAP2™
control topology, which enables fast transient
response and supports both POSCAP and all MLCC
output capacitors. TI proprietary FET technology
combined with TI leading-edge package technology
provides the highest density solution for single-output
power rail such as VCCIO and VDDQ for DDR
notebook memory, or any point-of-load (POL) in wide
application.
1
2
•
•
•
•
•
•
•
•
•
•
Input Voltage Range: 3 V to 22 V
Output Voltage Range: 0.6 V to 2 V
8-A or 10-A Integrated FET Converter
(see Table 1)
Fewest External Components
Soft-Start Time Programmable by External
Capacitor
Switching Frequency: 400 kHz and 800 kHz
D-CAP2™ Architecture to Enable POSCAP and
All MLCC Output Capacitor Usage
Integrated and Temperature Compensated
Low-Side On-Resistance Sensing for Accurate
OCL Protection
Powergood Output
OCL, OVP, UVP and UVLO Protections
Thermal Shutdown (non-latch)
Output Discharge Function
Integrated Boost MOSFET Switch
28-Pin, 3.5-mm × 4.5-mm, RVE, QFN Package
with 0.4-mm Pitch and 1-mm Height
The feature set includes switching frequency of 400
kHz and 800 kHz. Programmable soft-start time with
an external capacitor. auto skip, pre-bias startup,
integrated bootstrap switch, power good, enable and
a full suite of fault protection schemes, including
OCL, UVP, OVP, 5-V UVLO and thermal shutdown.
It is packaged in 3.5 mm × 4.5 mm, 0.4-mm pitch, 28pin QFN (RVE), and specified from -10°C to 85°C.
Table 1. Current Ratings
FREQUENCY SETTING
MAX IDC
800 kHz
8A
400 kHz
10 A
APPLICATIONS
•
•
Notebook Computers (VCCIO)
Memory Rails (DDR VDDQ)
SIMPLIFIED APPLICATION
VSNS
GSNS
23
22
21
GSNS VSNS SLEW
20
19
TRIP GND
18
17
16
15
V5
VIN
VIN
VIN
24 REFIN2
PGND 14
PGND 13
25 REFIN
26 VREF
PGND 12
TPS51363
PGND 11
27 NU
PGND 10
28 EN
PGOOD
1
EN
PGOOD
VIN
7.4 V
to
20 V
NU MODE NC
2
3
4
BST
SW
SW
SW
SW
5
6
7
8
9
VOUT
1.05 V
UDG-12205
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
D-CAP2 is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
TPS51363
SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
(1)
(2)
ORDERABLE DEVICE
NUMBER
TA
PACKAGE
–10°C to 85°C
Plastic Quad Flat Pack (QFN)
TPS51363RVET
TPS51363RVER
(2)
PINS
28
TRANSPORT MEDIA
MINIMUM
ORDER
QUANTITY
Small tape-and-reel
250
Large tape-and-reel
3000
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the TI
website at www.ti.com.
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
VIN
UNIT
MIN
MAX
–0.3
30
36
BST
transient <10 ns
38
w/r/t SW
Input voltage range (2)
6
SW
30
EN, TRIP, NU, MODE, V5
-0.3
SLEW, VSNS, REFIN, REFIN2
Output voltage range (2)
–0.3
3.6
GSNS
–0.35
0.35
PGND
-0.3
0.3
PGOOD
–0.3
6
VREF
–0.3
3.6
–5
36
NC
Electrostatic discharge
Human body model (HBM) QSS 009-105 (JESD22-A114A)
2000
Charged device model (CDM) QSS 009-147 (JESD22-C101B.01)
–10
150
Storage temperature range, Tstg
–55
150
(2)
V
V
500
Junction temperature range, TJ
(1)
V
6
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the network ground terminal unless otherwise noted.
.
2
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.
THERMAL INFORMATION
TPS51363
THERMAL METRIC (1)
θJA
Junction-to-ambient thermal resistance
40.2
θJCtop
Junction-to-case (top) thermal resistance
22.8
θJB
Junction-to-board thermal resistance
20.1
ψJT
Junction-to-top characterization parameter
1.6
ψJB
Junction-to-board characterization parameter
19.4
θJCbot
Junction-to-case (bottom) thermal resistance
2.2
(1)
UNITS
QFN (RVE)
(28 PINS)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
Supply voltage range
VIN
V5
BST
SW
Input voltage range
Output voltage range
MIN
MAX
3
22
4.6
5.5
–0.1
33.5
–3
27
EN, TRIP, NU, MODE
–0.1
5.5
SLEW, VSNS, REFIN, REFIN2
–0.1
3.5
GSNS
–0.1
0.3
PGND
–0.1
0.1
PGOOD
–0.1
5.5
VREF, SLEW
–0.1
3.5
–10
85
Operating free-air temperature, TA
UNIT
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V
°C
3
TPS51363
SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VIN = 12 V, VV5 = 5 V, MODE = GND, VEN = 3.3 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
IV5
V5 supply current
TA=25°C, No load, VEN = 5 V
560
μA
IV5SDN
V5 shutdown current
TA=25°C, No load, VEN = 0 V
1
μA
VREF OUTPUT
VVREF
Reference voltage
IVREF(OCL)
Current limit
IVREF = 30 µA, w.r.t. GSNS
0 µA ≤ IVREF ≤ 300 µA, -10°C ≤ TA ≤ 85°C
(VVREF–VGSNS) = 1.7 V
2
-1.0%
0.4
V
1.0%
1
mA
VOLTAGE AMPLIFIER
IVSNS
VSNS input current
VVSNS = 1 V
IVSNS(DIS)
VSNS discharge current
VEN = 0 V, VVSNS = 0.5 V
-1
1
μA
12
mA
SWITCH TIMING
tOFF(min)
Minimum off-time
320
ns
tDEAD1
Deadtime1 (1)
SW rising to falling
35
ns
tDEAD2
Deadtime2 (1)
SW falling to rising
10
ns
INTERNAL BOOT STRAP SW
VFBST
Forward foltage
VV5 - BST, TA = 25°C, IF = 10 mA
IBST
BST leakage current
TA = 25°C, VBST = 14 V, VSW = 7 V
0.1
0.2
V
0.01
1.5
μA
MOSFET ON-RESISTANCE
RDS(on)H
High-side on-resistance
TA = 25°C, VV5 = 5 V
20
mΩ
RDS(on)L
Low-side on-resistance
TA = 25°C, VV5 = 5 V
10
mΩ
LOGIC THRESHOLD
VMODE(TH)
MODE threshold voltage
VLL
EN low-level voltage
VLH
EN high-level voltage
VL(HYST)
EN hysteresis voltage
VL(LK)
EN input leakage current
MODE = Float
2.5
V
0.35
0.9
V
0.25
-1
V
0
V
1
μA
SOFT-START
ISS
Soft-Start current
Soft-start current source
μA
10
PGOOD COMPARATOR
VPGTH
PGOOD threshold
PGOOD in from lower (startup)
IPG
PGOOD sink current
VPGOOD = 0.5V
tPG(CMPSS)
PGOOD start-up delay
PGOOD comparator startup delay
IPG(LK)
PGOOD leakage current
(1)
4
92%
6
mA
1.5
-1
0
ms
1
μA
Ensured by design.
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V, VV5 = 5 V, MODE = GND, VEN = 3.3 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
OVERCURRENT LIMIT LEVEL
IOCL
Current limit threshold
VZC (2)
Zero cross detection offset
VTRIP = 0 V, valley current set point, TA=25°C
7
8
9
VTRIP = 5 V, valley current set point, TA=25°C
10.5
12
13.5
0
A
mV
PROTECTIONS
VPOR
V5 POR threshold voltage (2)
Reset OVP fault
1.7
V
VPORHYS
V5 POR threshold voltage
hysteresis (2)
Reset OVP fault hysteresis
85
mV
VUVLO
V5 UVLO threshold voltage
VOVP
OVP threshold voltage
OVP detect voltage
tOVPDLY
OVP propagation delay
With 100 mV overdrive
VOOB
OOB threshold voltage
VUVP
UVP threshold voltage
tUVPDLY
UVP delay
Wake-up
4.3
4.4
4.6
Shutdown
3.8
4
4.2
118%
120%
123%
430
105.5%
UVP detect voltage
63%
V
ns
109.5%
66%
69%
1
ms
THERMAL SHUTDOWN
TSDN
(2)
Thermal shutdown threshold (2)
Shutdown temperature
Hysteresis
140
10
°C
Ensured by design.
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SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
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DEVICE INFORMATION
VIN
VIN
16
15
14
VIN
17
13
V5
18
12
GND
19
NU
11
TRIP
20
PGND
PGND
EN
10
SLEW
21
26
VSNS
VREF
27
22
25
PGND
28
GSNS
REFIN
PGND
24
PGND
1
2
3
4
5
6
7
8
9
NU
MODE
NC
BST
SW
SW
SW
SW
Thermal Pad
PGOOD
REFIN2
6
23
RVE PACKAGE
28 PINS
(TOP VIEW)
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SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
PIN FUNCTIONS
NAME
NO.
I/O/P
DESCRIPTION
BST
5
I
Power supply for internal high side MOSFET. Connect a 0.1-µF bootstrap capacitor between this pin and
SW pin.
EN
GND
28
I
Enable signal, 1.05-V logic compatible.
19
—
General device ground.
GSNS
23
O
GND sense input. Connect GSNS to general/system ground or GND sensing point at the output return.
MODE
3
I
Frequency (400 kHz or 800 kHz) programmable input (see Table 3).
NC
4
—
Not connected.
NU
2, 27
—
Not used for external applications.
—
Power ground. Connect to the system ground.
10
11
PGND
12
13
14
PGOOD
1
O
PGOOD output. Connect a pull-up resistor with a value of 100 kΩ to this pin.
Power
PAD
29
—
Connect to system ground by multiple vias.
REFIN
25
I
Target output voltage input pin. 0.6 V to 2 V, 1.05 V/1.2 V built-in (GND and Open) (see Table 2).
REFIN2
24
I
Tie to GND or float. This input is used to determine the fixed voltage setpoint (see Table 2).
SLEW
21
O
Connect a capacitor between this pin and GND for soft start and integrator functions.
O
Switching node output. Connect external inductor.
6
SW
7
8
9
TRIP
20
I
OCL programmable input (see Table 4).
V5
18
I
5-V power supply for analog circuits and gate driver.
15
I
16
I
VIN
Power supply input pin. Apply 3-V to 22-V of supply voltage.
17
I
VREF
26
O
2-V reference output. Connect A 0.22-µF ceramic capacitor between this pin and the GNDS pin.
VSNS
22
I
Output voltage sense input.
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FUNCTIONAL BLOCK DIAGRAM
REFIN REFIN2
PGOOD
VREFIN – 34%
VREF
Reference
+
UV
Reference
Detection
VREFIN + 20%
+
Delay
GSNS
+
EN
VREFIN + 20%
Soft-Start
+
OV
VREFIN - 8/34%
SLEW
VSNS
VREFIN
+
PWM
+
·
·
·
·
·
Control Mode
On-Time
Selection
Control Logic
On/Off Time
Minimum On /Off
SKIP/FCCM
OCL/OVP/UVP
Disharge
MODE
BST
VIN
Discharge
Phase
Compensation
SW
XCON
tON
One Shot
TRIP
TRIP
Detection
OCL
Reference
Voltage
V5
OC
+
NOC
+
+
5-V UVLO
+
PGND
V5OK
ZC
4.4 V/4.0 V
GND
TPS51363
UDG-12235
8
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SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
TYPICAL CHARACTERISTICS
100
100
90
90
80
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.05V
70
1
Output Current (A)
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.05V
VIN = 7.4V
VIN = 11.1V
VIN = 20V
60
0.1
10
1
Output Current (A)
G001
Figure 1.
Figure 2.
EFFICIENCY
vs
OUTPUT CURRENT
EFFICIENCY
vs
OUTPUT CURRENT
100
90
90
Efficiency (%)
100
80
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.35V
70
1
Output Current (A)
VIN = 7.4V
VIN = 11.1V
VIN = 20V
1
Output Current (A)
G003
Figure 3.
Figure 4.
FREQUENCY
vs
OUTPUT CURRENT
FREQUENCY
vs
OUTPUT CURRENT
600
G002
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.35V
60
0.1
10
10
80
70
VIN = 7.4V
VIN = 11.1V
VIN = 20V
60
0.1
10
G004
1000
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.05V
VIN = 7.4V
VIN = 11.1V
VIN = 20V
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.05V
950
900
Frequency (kHz)
550
Frequency (kHz)
80
70
VIN = 7.4V
VIN = 11.1V
VIN = 20V
60
0.1
Efficiency (%)
EFFICIENCY
vs
OUTPUT CURRENT
Efficiency (%)
Efficiency (%)
EFFICIENCY
vs
OUTPUT CURRENT
500
450
400
VIN = 7.4V
VIN = 11.1V
VIN = 20V
850
800
750
700
350
300
650
1
2
3
4
5
6
7
Output Current (A)
8
9
10
600
1
G005
Figure 5.
2
3
4
5
6
7
Output Current (A)
8
9
10
G006
Figure 6.
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TYPICAL CHARACTERISTICS (continued)
FREQUENCY
vs
OUTPUT CURRENT
FREQUENCY
vs
OUTPUT CURRENT
600
1000
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.35V
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.35V
950
900
Frequency (kHz)
Frequency (kHz)
550
VIN = 7.4V
VIN = 11.1V
VIN = 20V
500
450
400
VIN = 7.4V
VIN = 11.1V
VIN = 20V
850
800
750
700
350
300
650
1
2
3
4
5
6
7
Output Current (A)
8
9
600
10
1.07
VIN = 7.4V
VIN = 11.1V
VIN = 20V
1.09
1.08
1.03
10
G008
1.03
1.00
0.1
10
VIN = 7.4V
VIN = 11.1V
VIN = 20V
1.04
1.01
1
Output Current (A)
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.05V
1.05
1.02
1
Output Current (A)
G009
Figure 9.
Figure 10.
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.40
10
G010
1.40
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.35V
VIN = 7.4V
VIN = 11.1V
VIN = 20V
1.39
Output Voltage (V)
1.38
1.36
1.35
1.34
1.33
1.37
1.35
1.34
1.33
1.32
1.31
1.31
10
VIN = 7.4V
VIN = 11.1V
VIN = 20V
1.36
1.32
1
Output Current (A)
fSW = 800kHz
LOUT = 0.33µH
TA = 25°C
VOUT = 1.35V
1.30
0.1
G011
Figure 11.
10
9
1.06
1.01
1.00
0.1
Output Voltage (V)
1.07
1.02
1.30
0.1
8
1.10
fSW = 400kHz
LOUT = 1µH
TA = 25°C
VOUT = 1.05V
1.04
1.37
5
6
7
Output Current (A)
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.05
1.38
4
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.06
1.39
3
Figure 8.
Output Voltage (V)
Output Voltage (V)
1.08
2
Figure 7.
1.10
1.09
1
G007
1
Output Current (A)
10
G012
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
60
225
60
225
40
180
40
180
20
135
20
135
0
90
0
90
1k
−40
−45
−60
−90
1M
−80
Gain
Phase
10k
100k
Frequency (Hz)
−20
0
270
Power Stage Design = 0.33µH + 6 × 22µF
45
fSW = 800kHz
IOUT = 8A
TA = 25°C
VIN = 12V
VOUT = 1.05V
1k
0
Gain
Phase
10k
G013
100k
Frequency (Hz)
Figure 13.
Figure 14.
GAIN and PHASE
vs
FREQUENCY
GAIN and PHASE
vs
FREQUENCY
−45
−90
1M
G014
80
60
225
60
225
40
180
40
180
20
135
20
135
0
90
0
90
Power Stage Design = 1µH + 6 × 22µF
−20
−60
−80
45
fSW = 400kHz
IOUT = 8A
TA = 25°C
VIN = 12V
VOUT = 1.35V
−40
1k
−40
−45
−60
100k
Frequency (Hz)
−90
1M
−80
270
Power Stage Design = 0.33µH + 6 × 22µF
−20
0
Gain
Phase
10k
Gain (dB)
270
80
45
fSW = 800kHz
IOUT = 8A
TA = 25°C
VIN = 12V
VOUT = 1.35V
1k
0
Gain
Phase
10k
G015
100k
Frequency (Hz)
−45
−90
1M
Figure 15.
Figure 16.
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
Figure 17. f = 400kHz, VIN = 20V, IOUT = 0.1A
Figure 18. f = 400kHz, VIN = 20V, IOUT = 8A
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Phase (°)
−60
−80
45
fSW = 400kHz
IOUT = 8A
TA = 25°C
VIN = 12V
VOUT = 1.05V
−40
Phase (°)
Gain (dB)
−20
Gain (dB)
80
Power Stage Design = 1µH + 6 × 22µF
Phase (°)
270
80
Gain (dB)
GAIN and PHASE
vs
FREQUENCY
Phase (°)
GAIN and PHASE
vs
FREQUENCY
G016
11
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TYPICAL CHARACTERISTICS (continued)
12
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE RIPPLE
vs
OUTPUT CURRENT
Figure 19. f = 800kHz, VIN = 20V, IOUT = 0.1A
Figure 20. f = 800kHz, VIN = 20V, IOUT = 8A
TRANSIENT PERFORMANCE
vs
SWITCHING FREQUENCY
TRANSIENT PERFORMANCE
vs
SWITCHING FREQUENCY
Figure 21. f = 400kHz, VIN = 20V, IOUT = 0–5A
Figure 22. f = 800kHz, VIN = 20V, IOUT = 0–6A
vs
START-UP
vs
START-UP
Figure 23. f = 400kHz, VIN = 20V, IOUT = 8A
Figure 24. f = 800kHz, VIN = 20V, IOUT = 0A
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TYPICAL CHARACTERISTICS (continued)
vs
SHUTDOWN
vs
SHUTDOWN
Figure 25. f = 400kHz, VIN = 20V, IOUT = 8A
Figure 26. f = 800kHz, VIN = 20V, IOUT = 0A
AMBIENT TEMPERATURE
vs
OUTPUT CURRENT
90
Ambient Temperature (°C)
80
70
60
50
40
30
20
200 LFM
Natural Convection
0
1
2
3
4
5
6
7
Output Current (A)
fSW = 800 kHz
VIN = 20 V
VOUT =1.5 V
8
9
10
G017
Figure 27.
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APPLICATION INFORMATION
Functional Overview
The TPS51363 is an 8-A or 10-A (see Table 1), integrated FET synchronous step-down converter with
differential voltage feedback support.
It uses adaptive on-time D-CAP2 for compensation-less stable loop operation in POSCAP, POSCAP/MLCCs and
all MLCCs output capacitor configurations.
TPS51363 automatically operates in discontinuous mode to optimize light-load efficiency. A configurable 400-kHz
or 800-kHz switching frequency enables optimization of the power train for cost, size and efficiency performance
of the design.
VREF, REFIN, REFIN2 and Output Voltage
This device provides a 2.0-V, accurate voltage reference from the VREF pin. This output has a 300-uA sourcing
current capability to drive voltage setpoint reference through a voltage divider circuit as shown in Figure 28. To
ensure higher overall system voltage accuracy, the sum of the total resistance from VREF to GND should be
designed to be more than 67kohm. A MLCC capacitor with a value of 0.1uF or larger should be attached close to
the VREF pin. The voltage setpoint range supported by this device is between 0.6 V and 2.0 V.
This device also supports resistor-less fixed voltage operation by the use of both REFIN and REFIN2 pins.
Table 2 lists all the possible fixed voltage configurations by the REFIN and REFIN2 pin. The TPS51363 detects
the state of both REFIN and REFIN2 during the initial startup and decides the output voltage setpoint for the
operation.
Table 2. REFIN and REFIN2 Pin Settings
VOLTAGE (V)
VOUT OUTPUT
VOLTAGE (V)
REFIN PIN
(VREFIN)
REFIN2 PIN
(VREFIN2)
GND
GND
1.05
Float
GND
1.2
GND
Float
1.5
Float
Float
1.35
Resistor dividers
Either GND or
Float
Adjustable from 0.6 to 2.0
VREF 2 V
TPS51363
Either
REFIN2
R1
REFIN
R2
VREF
0.1 mF
UDG-13013
Figure 28. Setting the Output Voltage
14
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PWM Operation
TPS51363 employs DCAP2 mode operation. It uses an internal phase compensation network (RC1, RC2, CC1, CC2
and gain) to work with very low ESR output capacitors such as multi-layer ceramic capacitor (MLCC). The role of
such network is to sense and scale the current ripple component of the output inductor current information and
then use it in conjunction with the voltage feedback signal to achieve loop stability of the converter.
The transconductance (gM) amplifier and SLEW capacitor (C1) forms an integrator. The output ripple voltage
generated is inversed and averaged by this integrator. The AC information is superimposed onto otherwise DC
information and forms a reference voltage at the input of the PWM comparator. As long as the integrator time
constant is much larger than the inverse of the loop crossover frequency, the AC component is negligible.
f
gM
£ 0
(2p ´ C1)
10
where
•
•
gM is 60 µS
f0 is 1/3 or 1/4 of the switching frequency (fSW)
(1)
The voltage difference (VSLEW – VVSNS) is then compared to the G×(CSP-CSN) (see Figure 30) voltage at the
PWM comparator inputs. The PWM comparator creates a SET signal to turn on the high-side MOSFET during
each cycle when the current level falls below the loop demand (see Figure 29).
PWM
Inductor Current
REFIN
Output Voltage
SLEW
CSP - CSN
CSP - CSN
SLEW - VOUT
(1)
tON
UDG-13015
Time
Figure 29. On-Time Waveforms
(1)
(1)
ON time is initiated by (VOUT-SLEW) and (CSP-CSN) crossover
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The device operates at two distinct switching frequencies, 400 kHz and 800 kHz. The switching frequency is
configured by MODE pin for this converter operation (see Table 3). For stable operation of the buck converter, it
is generally recommended to have a unity gain crossover (f0) of 1/4 or 1/3 or the switching frequency. (see
Table 3).
Table 3. Mode and Recommended Frequency Settings
FREQUENCY (kHz)
MODE
CROSSOVER (f0)
SWITCHING (fSW)
MIN
MAX
GND
100
133
400
FLOAT
200
267
800
Given the range of the recommended unity gain frequency, the power stage design is flexible, as long as the
following equation is satisfied.
1
1
fLC =
£
´ f0
10
2p ´ LOUT ´ COUT
(2)
Operating in D-CAP2 mode, the overall loop response is dominated by the internal phase compensation network.
The compensation network is designed to have two identical zeros at 4 kHz (400-kHz operation) and 8 kHz (800kHz operation) in the frequency domain, which serves the purpose of splitting the LC double pole into one low
frequency pole (same as the L-C double pole) and one high-frequency pole (greater than the unity gain
crossover frequency).
VIN
CC1
VSNS
SW
R C1
22
CC2
SLEW
C1
CSP
CSN
21
G
–
–
+
+
REFIN
RC2
PWM
Comparator
LX
Control
Logic
and
Driver
VOUT
ESR
25
R LOAD
C OUT
PGND
R1
VREF
26
+
2.0 V
R2
TPS51363
UDG-13014
Figure 30. Simplified Architecture Illustrating DCAP2 Mode
Light-Load Operation
The mandatory light load operation for TPS51363 is referred to as auto skip. In auto-skip mode, the control logic
automatically reduces its switching frequency to improve light load efficiency. To achieve this intelligence, a zero
crossing detection comparator is used to prevent negative inductor current by turning off the low side FET when
the SW crossing zero is detected. The equation below shows the boundary load condition of this skip mode and
continuous conduction operation.
(V - VOUT ) VOUT 1
ILOAD(LL ) = IN
´
´
2 ´ LX
VIN
fSW
(3)
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Power Sequences: Soft-Start and Power Good
Prior to asserting EN high, the power stage conversion voltage and V5IN voltage should be up and running.
When EN is asserted high, TPS51363 provides soft start operation to suppress in-rush current during startup.
The soft start action is achieved by an internal SLEW current of 10 µA (typ) sourcing into a small external MLCC
capacitor connected from SLEW pin to GND.
Use Equation 4 to determine the soft-start timing.
V
tSS = CSLEW ´ OUT
ISLEW
where
•
•
•
CSLEW is the soft-start capacitance
VOUT is the output voltage
ISLEW is the internal, 10-µA current source
(4)
The TPS51363 includes a PGOOD open drain output. During the startup, once the output voltage is slewing up
within -8% of the final setpoint target, the PGOOD becomes asserted after 1.5 ms of delay from the end of the
soft-start period. During the operation, if the output voltage rises beyond 120% (typ) of the setpoint, the PGOOD
pin becomes immediately de-asserted without hysteresis. Re-asserting the PGOOD pin requires either resetting
either the V5IN pin or the EN pin. If the output voltage falls below 68% (typ) of the setpoint, the PGOOD pin
becomes immediately de-asserted without hysteresis. Re-asserting the PGOOD pin requires resetting either the
V5IN pin or the EN pin.
Fault Protection
Overcurrent Limit
TPS51363 integrates both high side and low side FETs to support a maximum DC current of 8-A or 10-A
operation. The current sensing method employed for over current limit is to monitor the SW node during the “ON”
state of the low side FET for each switching cycle. TRIP pin is used to program one of the two current limits for
TPS51363 operation (see Table 4). When the overcurrent limit is detected, the converter does not allow the next
“ON” cycle for the high side FET until the overcurrent limit is no longer reached. This ensures the safe operation
of the converter. And when the overcurrent limit condition persists, the current to the load exceeds the current to
the output capacitors, the output voltage tends to fall. When the output voltage falls below the undervoltage
protection threshold, the converter latch shut down.
Table 4. TRIP Pin Settings
TRIP
TYPICAL OCL
LIMIT IOCL (A)
GND
8
5V
12
Negative Overcurrent Limit
TPS51363 is also protected by the negative over current limit. Both positive and negative current limit is
programmed by the TRIP pin. Negative current limit level is the same as that of positive current limit level (see
Table 4). During the normal converter operation, negative current is not allowed due to the mandatory light load
operation for this device (Auto Skip). It is during the OOB or OVP operation, negative overcurrent might be
engaged.
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Out-of-Bounds Operation (OOB)
When the output voltage rises to 8% above the target value, the out-of-bound operation starts. During the OOB
operation, the controller operates in forced PWM-only mode by turning on low side FET. Turning on the low side
FET beyond the zero inductor current can quickly discharge the output capacitor thus causing VOUT to fall quickly
towards setpoint. During the operation, the cycle by cycle negative current limit is also activated to ensure the
safe operation of the internal FETs.
Overvoltage Profection (OVP) and Undervoltage Protection (UVP)
When the output voltage rises to a level 20% (typ) higher than the setpoint voltage, an overvoltage condition is
present. When a 0-V event is detected, the converter turns off the high side FET and turns on the low side FET.
The operation continues until the cycle by cycle negative current limit is reached and low side FET is turned off
and high side FET is turned on, for a minimum on-time. After the minimum on-time expires, the high side FET is
driven off and low side FET is driven on again until negative current limit is reached or VOUT is discharged to 0 V.
When the VOUT is discharged to 0 V, both high-side and low-side FETs are latched off. An OVP fault requires the
V5IN voltage to fall below POR threshold or EN reset to clear.
Undervoltage Protection (UVP)
The undervoltage protection (UVP) is set when the VOUT voltage falls below 68% (typ) of the setpoint voltage for
1msec or longer. In this fault condition, the converter turns off both high-side and low-side FETs. The UVP
function is enabled after 1.4 ms of soft start completion. An UVP fault requires 5-V UVLO or EN reset.
V5IN Undervoltage Lockout (UVLO) Protection
TPS51363 has a 5-V supply undervoltage lockout protection (UVLO) threshold. When the V5IN voltage is lower
than UVLO threshold voltage, Vout is shut off. This is a non-latch protection.
Power-On-Reset (POR)
To prevent single rail supply voltage brown-out due to output OV condition, when the output voltage is shut down
due to OVP fault, Power-on-Reset (POR) on V5IN is implemented. To reset OVP fault, V5IN voltage must fall
below POR threshold voltage of 1.7 V (typ) or EN reset to clear.
Thermal Shutdown
TPS51363 includes an internal temperature monitor. If the die temperature exceeds the threshold (published in
the EC table of this datasheet), the converter will be shutdown. This is a non-latch protection and the operation is
restarted with soft-start sequence when the device temperature is reduced by the hysteresis.
18
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DESIGN PROCEDURE
Introduction
The simplified design procedure is done for a VCCIO rail for Intel platform application using TPS51363.
Step One: Determine the system specifications.
The VCCIO rail requirements provide the following key parameters:
• VOUT = 1.05 V
• ICC(max) = 6 A
• IDYN(max) = 4 A
Step Two: Determine the power supply design specifications.
The input voltage range and operating frequency are of primary interest. For this example:
• 7.4 V ≤ VIN ≤ 19.5 V
• fSW = 800 kHz
Step Three: Set the output voltage.
TPS51363 supports resistor-less fixed voltage operation by the use of both REFIN and REFIN2 pins (see
Table 2). Grounding both REFIN and REFIN2 pins provides a 1.05-V fixed output setpoint.
Step Four: Determine inductance value and choose inductor.
Smaller values of inductor have better transient performance and smaller physical size but higher ripple and
lower efficiency. Higher values have the opposite characteristics. It is common practice to limit the ripple current
to 25% to 50% of the maximum current. For this example,use 30% as a starting point. IL(P-P)= 6 A × 0.30 = 1.8 A.
For a switching frequency of 800 kHz, maximum 19.5-V input and 1.05-V output.
æ
L=
V ´ dT
=
IP-P
VOUT ö
÷
f
è SW ´ VIN ø
æ
(VIN - VOUT )´ ç
IP-P
ö
1.05V
÷
è 800kHz ´ 19.5 V ø = 0.68 mH
1.8 A
(19.5 V - 1.05 V )´ ç
=
(5)
For this application, a 0.68-µH, 6.8-mm × 7.3-mm × 3.0-mm inductor with typical DCR of 4.8 mΩ and heating
current of 16 A is chosen. The Cyntec part number of the inductor is PIMB063T.
Step Five: Calculate SLEW capacitance.
The SLEW pin is used to program the soft-start time. During soft-start operation, the current source used to
program the SLEW rate is 10 µA (typ). In this design example, the soft-start timing should be target to be in the
range of 500 µs to 2 ms. The proper slew rate design minimizes large inductor current perturbation during the
startup, thus reducing the possibility of acoustic noise in the system.
dt
CSLEW = ISLEW ´
= 10nF
DVOUT
(6)
•
•
•
ISLEW = 10 µA,
dt = tSS = 1 ms
ΔVOUT = 1.05 V
Step Six: Select the proper OCL.
There are two options for the over current limit (see Table 4). For this application example, because ICC(max) =
6 A, the proper OCL level should be set at least 30% over the ICC(max) level, which makes the 8-A OCL
appropriate for this design. Grounding the TRIP pin achieves this effect.
Step Seven: Determine the output capacitance.
The amount of the output capacitance needed for this design is both a function of loop stability and of transient
requirement.
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Stability considerations
The switching frequency of the design example is 800 kHz (which is set by the MODE pin, see Table 4). For DCAP2 mode operation, it is generally recommended to have a unity gain crossover (f0) of less than 1/4 or 1/3 of
the switching frequency, which is approximately between 200 kHz and 266 kHz. In this design example, use 1/4.
f
f0 = SW = 200kHz
4
(7)
Given the range of the recommended unity gain crossover frequency, the power stage design is flexible, as long
as the L-C double pole frequency is less than 10% of f0.
When the above criterion is met, the internal compensation network provides sufficient phase boost at the unity
gain crossover frequency such that the converter is stable with sufficient phase margin (greater than 60°).
When the ESR frequency of the output bulk capacitor is in the vicinity of the unity gain crossover frequency of
the loop, additional phase boost can be achieved. This applies to higher ESR output bulk capacitor, POSCAP
and SPCAP.
When the ESR frequency of the output capacitor is beyond the unity gain crossover frequency of the control
loop, no additional phase boost is achieved. This applies to low or ultra low ESR output capacitor, such as
MLCCs.
For this application example,consider only all MLCCs for output capacitors. Based on Equation 3 and Equation 7,
the minimum capacitance for stable operation is calculated to be 110 µF.
Transient considerations
•
•
•
IDYN(max) = 4 A
di/dt = 2.5 A/µs
VOUT deviation = ±3% for the given transient
Use Equation 8 and Equation 9 to estimate the amount of capacitance needed for a given dynamic load/release.
ö
2 æV
´t
L ´ DILOAD(max) ´ ç OUT SW + tMIN(off ) ÷
ç VIN(min)
÷
è
ø
COUT(min_ under) =
æ æ VIN(min) - VOUT ö
ö
2 ´ DVLOAD(insert) ´ ç ç
÷ ´ tSW - tMIN(off ) ÷ ´ VOUT
÷
çç
÷
VIN(min)
ø
èè
ø
(8)
(
(
)
2
)
LOUT ´ DILOAD(max)
COUT(min_ over) =
2 ´ DVLOAD(release) ´ VOUT
(9)
Based on these calculation, to meet the transient requirement, the minimum amount of capacitance in this design
is 164 µF.
Considering both stability and transient, the minimum capacitance is 164 µF. The design example uses 8, 22-µF
capacitors with minor consideration of the MLCC derating for both DC and AC effect.
Step Eight: Select decoupling and peripheral components
For the TPS51363, peripheral capacitors use the following minimum values of ceramic capacitance. X5R or
better temperature coefficient is recommended. Tighter tolerance and higher voltage rating are always
appropriate.
• V5IN decoupling ≥ 2.2 µF, ≥ 10 V
• VREF decoupling 0.1 µF to 1 µF, ≥ 4 V
• Bootstrap capacitor ≥ 0.1 µF, ≥ 10 V
• Pull-up resistors on PGOOD, 100 kΩ
Step Nine: Layout guidelines
Figure 31 applies to the layer where device is situated. Additional reinforcement of VIN, PGND, and VOUT
through vias are always recommended.
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NU
MODE
NC
VIN
1
4
5
6
7
8
9
SW
PGOOD
PGND
SW
4
PGND
SW
3
PGND
SW
2
PGND
BST
1
PGND
1
3
1
5
1
2
1
6
1
1
1
7
1
0
V5
VIN
GND
1
8
VIN
SLEW
TRIP
1
9
2
8
EN
2
0
2
7
NU
2
1
2
6
VREF
2
2
2
5
REFIN
2
3
2
4
REFIN2
VSNS
SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013
GSNS
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Figure 31. TPS51363 Design Layout
Input capacitors, output capacitors, and the output inductor are the power components and should be placed on
one side of the PCB. Small signal components can be placed on the same side of the PCB with proper ground
isolation or the opposite side with at least one inner ground plane in between, depending on the
system/motherboard design requirement.
All sensitive analog traces and components such as VSNS, GSNS, SLEW, VREF, REFIN and REFIN2 should be
placed away from the high voltage switching node, such as SW and BST to avoid switching noise coupling. Use
internal layer(s) as ground plane(s) and shield feedback traces from power traces.
VSNS can be connected directly to the output voltage sense point at the load device or the bulk capacitor at the
converter side. Connect GSNS to ground return at the general ground plane/layer. VSNS and GSNS can be
used for the purpose of remote sensing across the load device, however, ensure to minimize the routing trace
length to prevent excess noise injection into the sense lines.
In order to effectively remove heat from the package, prepare the thermal land and solder to the package thermal
pad. Wide trace of the component-side copper, connected to this thermal land, helps to dissipate the heat.
Numerous vias (at least 6) with a 0.3-mm diameter connected from the thermal land to the internal/solder side
ground plane(s) should be used to help dissipation.
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REFERENCE DESIGNS
This section describes two typical application circuits using the TPS51363.
Design 1
This design is a VCCIO application with an output voltage of 1.05 V, maximum processor current (ICC(max)) of 6 A,
an OCL of 8 A and a switching frequency of 800 kHz.
V5
5V
2.2 mF
VSNS
10 nF
GSNS
0.1 μF
23
22
21
GSNS VSNS SLEW
20
19
TRIP GND
18
17
16
15
V5
VIN
VIN
VIN
2 x 10 mF
GND
24 REFIN2
PGND 14
GND
25 REFIN
PGND 13
26 VREF
0.1 mF
PGND 12
TPS51363
27 NU
PGND 11
28 EN
PGND 10
PGOOD
NU MODE NC
1
2
3
4
VIN
7.4 V
to
20 V
BST
SW
SW
SW
SW
5
6
7
8
9
8 x 22 mF
0.68 mH
EN
VOUT
0.1 mF
PGOOD
1.05 V
UDG-13029
Figure 32. Design 1: Application Schematic
Table 5. Design 1: List of Materials
22
REFERENCE
DESIGNATOR
QTY
SPECIFICATION
MANUFACTURER
PART NUMBER
CIN
2
10 µF, 25 V
Taiyo Yuden
TMK325BJ106MM
COUT
8
22 µF, 6.3 V
Murata
GRM21BB30J226ME38
LOUT
1
0.68 µH, 4.8 mΩ
Cyntec
PIMB063T-R68MS-63
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Design 2:
This design is a DDR3L, VDDQ, application with an output voltage of 1.35 V, maximum processor current
(ICC(max)) of 8 A, an OCL of 12 A, and a switching frequency of 400 kHz.
V5
5V
2.2 mF
VSNS
10 nF
GSNS
0.1 μF
23
22
21
GSNS VSNS SLEW
20
TRIP GND
18
17
16
15
V5
VIN
VIN
VIN
4 x 10 mF
24 REFIN2
PGND 14
25 REFIN
PGND 13
26 VREF
0.1 mF
19
PGND 12
TPS51363
27 NU
PGND 11
28 EN
PGND 10
PGOOD
NU MODE NC
1
2
3
4
VIN
7.4 V
to
20 V
BST
SW
SW
SW
SW
5
6
7
8
9
270 mF
1 mH
EN
VOUT
0.1 mF
PGOOD
1.35 V
UDG-13018
Figure 33. Design 2: Application Schematic
Table 6. Design 2: List of Materials
REFERENCE
DESIGNATOR
QTY
SPECIFICATION
MANUFACTURER
PART NUMBER
CIN
4
10 µF, 25 V
Taiyo Yuden
TMK325BJ106MM
COUT
1
270 µF, 2 V
Panasonic
2TPSF270M6E
LOUT
1
1 µH, 6.7 mΩ
Cyntec
PIMB063T-1R0MS-63
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REVISION HISTORY
NOTE: Page numbers of current version may differ from previous versions.
Changes from Original (February 2013) to Revision A
Page
•
Added MIN and MAX values to IOCL spec in Elec Char table ............................................................................................... 5
•
Changed the Functional Block Diagram VREFIN signal line identifier on the UV-detect device from "VREFIN – 32%" to
"VREFIN – 34%". Changed signal line identifier on the high-side comparator from "VREFIN+ 8/20%" to "VREFIN+ 20%".
Changed the high-side device symbol from hysteresis to a comparator. Changed signal line identifier on the lowside device from "VREFIN– 8/32%" to "VREFIN– 8/34%. ........................................................................................................... 8
•
Added Land pads for a 0.1-µF capacitor between VIN and PGND of the TPS51363 Design Layout figure. .................... 21
•
Added a 0.1-µF capacitor symbol between VIN and PGND of the Design 1: Application Schematic. ............................... 22
•
Changed LOUT inductor part number from PIMB063T to PIMB063T-R68MS-63 in Design 1: List of Materials table. ....... 22
•
Changed text from "LPDDR3" to "DDR3L" in Design 2 description section. ...................................................................... 23
•
Added 0.1 µF capacitor symbol between VIN and PGND in Design 2: Application Schematic figure ............................... 23
•
Changed LOUT inductor spec from 1 µH, 6.5 mΩ to 6.7 mΩ, and part number from PCME063T to PIMB063T1R0MS-63 in Design 2: List of Materials table. .................................................................................................................. 23
24
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Aug-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
FX033
ACTIVE
VQFN
RVE
28
3000
Pb-Free (RoHS
Exempt)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 85
TPS51363
FX033Z
ACTIVE
VQFN
RVE
28
3000
Pb-Free (RoHS
Exempt)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 85
TPS51363
TPS51363RVER
ACTIVE
VQFN
RVE
28
3000
Pb-Free (RoHS
Exempt)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 85
TPS51363
TPS51363RVET
ACTIVE
VQFN
RVE
28
250
Pb-Free (RoHS
Exempt)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 85
TPS51363
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Aug-2013
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-May-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS51363RVER
VQFN
RVE
28
3000
330.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
TPS51363RVET
VQFN
RVE
28
250
180.0
12.4
3.8
4.8
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-May-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS51363RVER
VQFN
RVE
28
3000
367.0
367.0
35.0
TPS51363RVET
VQFN
RVE
28
250
210.0
185.0
35.0
Pack Materials-Page 2
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