TYSEMI 2N7002K

MOSFET
IC
DIP Type
SMD
Type
Type
Product specification
2N7002K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Low Gate Threshold Voltage
0.4
3
Low On-Resistance: RDS(ON)
1
Fast Switching Speed
0.55
Low Input Capacitance
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low Input/Output Leakage
+0.05
0.1-0.01
+0.1
0.97-0.1
Drain
1.Base
1 GATE
2.Emitter
2 SOURCE
0-0.1
Gate
Protection
Diode
Source
+0.1
0.38-0.1
Gate
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Symbol
Rating
Unit
Drain-Source Voltage
Parameter
VDSS
60
V
Gate-Source Voltage
VGSS
DrainCurrent (Note 1)
-Continuous
ID
-Pulsed (Note 2)
PowerDissipation (Note 1)
PD
Thermal Resistance, Junction to Ambient
R
Operating and Storage Temperature Range
V
20
JA
Tj, TSTG
300
mA
800
mA
350
mW
357
W
-65 to +150
Notes: 1. Device mounted on FR-4 PCB.
2. Pulse width £10mS, Duty Cycle £1%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain-Source Breakdown Voltage (Note 3)
VDSS
VGS = 0V, ID = 10
Zero Gate Voltage Drain Current (Note 3)
IDSS
VDS = 60V, VGS = 0V
Gate-Body Leakage (Note 3)
IGSS
VGS =
Gate Threshold Voltage (Note 3)
VGS(th)
Static Drain-Source On-Resistance (Note 3)
RDS (ON)
Forward Transfer Admittance (Note 3)
|Yfs|
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Min
Typ
Max
60
A
V
1.0
20V, VDS = 0V
10
VDS = 10V, ID = 1mA
1.0
1.6
2.5
VGS = 10V, ID = 0.5A
2.0
VGS = 5V, ID = 0.05A
3.0
VGS = 10V, VDS = 0 .2 A
Unit
80
VDS = 25V, VGS = 0V,f = 1.0MHz
A
A
V
ms
50
pF
25
pF
5.0
pF
Note: 3. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
702.
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1 of 3
MOSFET
IC
DIP Type
SMD
Type
Type
Product specification
2N7002K
Typical Characteristics
1.4
1.00
VGS = 10V
8V
6V
5V
4V
3V
VDS = 10V
Pulsed
8V
6V
1.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
10V
5V
0.8
4V
0.6
0.4
0.2
TA = 125° C
0.10
TA = 75° C
TA = 25° C
TA = -25° C
3V
0.01
0
0
1
2
1.5
1
5
4
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
2.5
3
3.5
4.5
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125° C
1.5
TA = 85° C
TA = 150° C
1
1
TA = -55° C
TA = 25° C
0.5
0
-50
T A = 0° C
-25
0
25
50
75
100
125
150
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
10
0.1
0.001
TA = -25° C
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
7
VGS = 5V
Pulsed
TA = 125° C
TA = 25° C
Pulsed
6
TA = 85° C
ID = 300mA
TA = 150° C
5
4
1
TA = -55° C
TA = 25° C
TA = 0° C
3
TA = -25° C
2
ID = 150mA
1
0.1
0
0.001
0.01
0.1
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
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0
2
4
6
8
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
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2 of 3
MOSFET
IC
DIP Type
SMD
Type
Type
Product specification
2N7002K
2.5
1
VGS = 10V
Pulsed
VGS = 0V
Pulsed
2
ID = 150mA
1.5
1
0.5
IDR, REVERSE DRAIN CURRENT (A)
ID = 300mA
TA = 125° C
TA = 150° C
0.1
TA = 85° C
TA = 25° C
TA = 0° C
0.01
TA = -25° C
TA = -55° C
0
0.001
-75 -50
-25
0
25
50
75
100 125 150
0.5
0
Tch, CHANNEL TEMPERATURE (° C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
VGS = 10V
TA= 25°C
Pulsed
0.1
0.01
VGS = 0V
0.001
0.5
0
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
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1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
1
1
1
VGS = 10V
Pulsed
TA = 25° C
TA = 150° C
0.1
TA = -55° C
TA = 85° C
0.01
0.001
0.001
0.01
0.1
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
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