MOSFET IC DIP Type SMD Type Type Product specification 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS(ON) 1 Fast Switching Speed 0.55 Low Input Capacitance 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low Input/Output Leakage +0.05 0.1-0.01 +0.1 0.97-0.1 Drain 1.Base 1 GATE 2.Emitter 2 SOURCE 0-0.1 Gate Protection Diode Source +0.1 0.38-0.1 Gate 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Symbol Rating Unit Drain-Source Voltage Parameter VDSS 60 V Gate-Source Voltage VGSS DrainCurrent (Note 1) -Continuous ID -Pulsed (Note 2) PowerDissipation (Note 1) PD Thermal Resistance, Junction to Ambient R Operating and Storage Temperature Range V 20 JA Tj, TSTG 300 mA 800 mA 350 mW 357 W -65 to +150 Notes: 1. Device mounted on FR-4 PCB. 2. Pulse width £10mS, Duty Cycle £1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain-Source Breakdown Voltage (Note 3) VDSS VGS = 0V, ID = 10 Zero Gate Voltage Drain Current (Note 3) IDSS VDS = 60V, VGS = 0V Gate-Body Leakage (Note 3) IGSS VGS = Gate Threshold Voltage (Note 3) VGS(th) Static Drain-Source On-Resistance (Note 3) RDS (ON) Forward Transfer Admittance (Note 3) |Yfs| Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Min Typ Max 60 A V 1.0 20V, VDS = 0V 10 VDS = 10V, ID = 1mA 1.0 1.6 2.5 VGS = 10V, ID = 0.5A 2.0 VGS = 5V, ID = 0.05A 3.0 VGS = 10V, VDS = 0 .2 A Unit 80 VDS = 25V, VGS = 0V,f = 1.0MHz A A V ms 50 pF 25 pF 5.0 pF Note: 3. Short duration test pulse used to minimize self-heating effect. Marking Marking 702. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 MOSFET IC DIP Type SMD Type Type Product specification 2N7002K Typical Characteristics 1.4 1.00 VGS = 10V 8V 6V 5V 4V 3V VDS = 10V Pulsed 8V 6V 1.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 10V 5V 0.8 4V 0.6 0.4 0.2 TA = 125° C 0.10 TA = 75° C TA = 25° C TA = -25° C 3V 0.01 0 0 1 2 1.5 1 5 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2 2.5 3 3.5 4.5 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VGS = 10V Pulsed VDS = 10V ID = 1mA Pulsed TA = 125° C 1.5 TA = 85° C TA = 150° C 1 1 TA = -55° C TA = 25° C 0.5 0 -50 T A = 0° C -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 10 0.1 0.001 TA = -25° C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 7 VGS = 5V Pulsed TA = 125° C TA = 25° C Pulsed 6 TA = 85° C ID = 300mA TA = 150° C 5 4 1 TA = -55° C TA = 25° C TA = 0° C 3 TA = -25° C 2 ID = 150mA 1 0.1 0 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current http://www.twtysemi.com [email protected] 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 4008-318-123 2 of 3 MOSFET IC DIP Type SMD Type Type Product specification 2N7002K 2.5 1 VGS = 10V Pulsed VGS = 0V Pulsed 2 ID = 150mA 1.5 1 0.5 IDR, REVERSE DRAIN CURRENT (A) ID = 300mA TA = 125° C TA = 150° C 0.1 TA = 85° C TA = 25° C TA = 0° C 0.01 TA = -25° C TA = -55° C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS = 10V TA= 25°C Pulsed 0.1 0.01 VGS = 0V 0.001 0.5 0 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage http://www.twtysemi.com [email protected] 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) 1 1 1 VGS = 10V Pulsed TA = 25° C TA = 150° C 0.1 TA = -55° C TA = 85° C 0.01 0.001 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 4008-318-123 3 of 3