SSM2605GY
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
S
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
D
D
-30V
RDS(ON)
80mΩ
ID
G
SOT-26
BVDSS
D
- 4A
D
DESCRIPTION
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient
and ost-effectiveness device.
D
G
The SOT-26 package is universally used for all commercial- industrial
applications.
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
±20
V
3
-4
A
3
-3.3
A
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-a
11/16/2007 Rev.1.00
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
62.5
℃/W
1
SSM2605GY
ELECTRICAL CHARACTERISTICS
o
(TJ=25 C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-4A
-
-
80
mΩ
VGS=-4.5V, ID=-3A
-
-
120
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-5V, ID=-4A
-
6
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-4A
-
5.5
8.8
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.6
-
nC
VDS=-15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=-25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Min.
Typ.
IS=-1.6A, VGS=0V
-
-
-1.2
V
IS=-4A, VGS=0V,
-
21
-
ns
dI/dt=100A/µs
-
14
-
nC
SOURCE-DRAIN DIODE
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
11/16/2007 Rev.1.00
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2
SSM2605GY
45
40
- 10 V
-7.0V
T A =25 o C
40
T A = 150 o C
35
- 10 V
-7.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
35
30
-5.0V
-4.5V
25
20
15
30
25
-5.0V
-4.5V
20
15
10
10
5
5
V G =-3.0V
0
V G =-3.0V
0
0
1
2
3
4
5
6
7
8
9
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
5
6
7
8
1.6
= -3.0 A
I DI D=-4.2A
I D =-4.0A
V G =10V
o
o
A =25C C
T AT=25
1.4
Normalized RDS(ON)
95
RDS(ON) (mΩ )
3
Fig 2. Typical Output Characteristics
105
85
75
65
1.2
1.0
0.8
55
0.6
3
5
7
9
11
-50
0
-V GS , Gate-to-Source Voltage (V)
3
2
-VGS(th) (V)
2.5
T j =150 o C
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
50
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
-IS(A)
2
-V DS , Drain-to-Source Voltage (V)
T j =25 o C
1
1.5
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
-V SD , Source-to-Drain Voltage (V)
11/16/2007 Rev.1.00
100
150
o
T j , Junction Temperature ( C)
Fig 5. Forward Characteristic of
Reverse Diode
50
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
SSM2605GY
f=1.0MHz
1000
10
C iss
V DS =-24V
I D =-4A
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
4
C rss
2
10
0
0
2
4
6
8
10
1
12
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.01
Normalized Thermal Response (Rthja)
1
10
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
Fig 11. Switching Time Waveform
11/16/2007 Rev.1.00
Q
Fig 12. Gate Charge Waveform
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SSM2605GY
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
11/16/2007 Rev.1.00
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5