SSM6680GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
30V
R DS(ON)
11mΩ
ID
11.5A
DESCRIPTION
The SSM6680GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM6680M is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
Pb-free; RoHS-compliant SO-8
D
D
D
D
G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
±25
V
ID
Continuous drain current, TC = 25°C
11.5
A
TC = 70°C
9.5
A
50
A
2.5
W
0.02
W/°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘ JA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
50
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
12/16/2005 Rev.3.01
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SSM6680GM
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static drain-source on-resistance2
VGS=10V, ID=11.5A
-
-
11
mΩ
VGS=4.5V, ID=9.5A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=11.5A
-
30
-
S
IDSS
Drain-source leakage current
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V ,VGS=0V, Tj = 70°C
-
-
25
uA
VGS=±25V
-
-
±100
nA
ID=11.5A
-
16.8
-
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=15V
-
4.2
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=5V
-
8
-
nC
td(on)
Turn-on delay time
tr
2
VDS=15V
-
8.9
-
ns
Rise time
ID=1A
-
7.3
-
ns
td(off)
Turn-off delay time
RG=5.5Ω , VGS=10V
-
25.6
-
ns
tf
Fall time
RD=10Ω
-
18.6
-
ns
Ciss
Input capacitance
VGS=0V
-
1450
-
pF
Coss
Output capacitance
VDS=25V
-
285
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
180
-
pF
Min.
Typ.
-
-
1.3
V
-
-
1.92
A
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward voltage
IS=3.5A, VGS=0V
IS
Continuous Source Current ( Body Diode) VD=VG=0V , VS=1.3V
Max. Units
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
12/16/2005 Rev.3.01
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SSM6680GM
50
40
10V
8.0V
6.0V
o
T C =25 C
10V
8.0V
6.0V
4.0V
T C =150 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
30
4.0V
30
20
20
10
V GS =3.0V
10
V GS =3.0V
0
0
0
1
1
2
2
0
3
1
1
2
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =11.5A
T C =25°C
I D =11.5A
V GS =10V
Normalized R DS(ON)
RDS(ON) (mΩ )
60
40
1.4
0.8
20
0
0.2
2
4
6
8
10
12
-50
0
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
12/16/2005 Rev.3.01
50
o
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM6680GM
15
3
10
2
PD (W)
ID , Drain Current (A)
2.5
1.5
5
1
0.5
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
T C =25 o C
Single Pulse
Normalized Thermal Response (R thja)
100us
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=125 oC/W
DC
0.001
0.01
0.0001
0.1
1
10
0.001
0.1
1
10
100
1000
t , Pulse Width (s)
V DS (V)
Fig 7. Maximum Safe Operating Area
12/16/2005 Rev.3.01
0.01
100
Fig 8. Effective Transient Thermal Impedance
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SSM6680GM
f=1.0MHz
15
10000
I D =11.5A
V DS =15V
VGS , Gate to Source Voltage (V)
12
Ciss
1000
C (pF)
9
Coss
Crss
6
100
3
0
10
0
10
20
30
40
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
2.5
10
2
o
IS(A)
VGS(th) (V)
Tj=25 C
Tj=150 o C
1
1.5
1
0.1
0
0.4
0.8
1.2
1.6
-50
Fig 11. Forward Characteristic of
Reverse Diode
12/16/2005 Rev.3.01
0
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM6680GM
VDS
90%
RD
VDS
D
0.5 x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
12/16/2005 Rev.3.01
Q
Fig 16. Gate Charge Waveform
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SSM6680GM
PHYSICAL DIMENSIONS
D
SYMBOL
MIN
MAX
A
1.35
1.75
A1
0.10
0.25
B
0.33
0.51
C
0.19
0.25
D
4.80
5.00
E
3.80
4.00
H
E
e
e
A
A1
C
B
L
1.27(TYP)
H
5.80
6.50
L
0.38
1.27
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 6680GM
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
12/16/2005 Rev.3.01
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