SSM2316GN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
30V
R DS(ON)
42mΩ
ID
4.7A
DESCRIPTION
The SSM2316GN acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2316GN is supplied in an RoHS-compliant
SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount
applications.
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3
G
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
IDM
PD
Continuous drain current
Pulsed drain current
3
,
Value
Units
30
V
± 20
V
T A = 25°C
4.7
A
TA = 70°C
3.7
A
10
A
1.38
W
0.01
W/°C
1,2
3
Total power dissipation , TA = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
90
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.
6/16/2006 Rev.3.01
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SSM2316GN
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=4A
-
-
42
mΩ
VGS=4.5V, ID=2A
-
-
72
mΩ
VDS=VGS, ID=250uA
1
-
3
V
5
-
S
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=4A
-
IDSS
Drain-source leakage current
VDS=30V, VGS=0V
-
-
1
uA
VDS=24V ,VGS=0V, Tj = 70°C
-
-
10
uA
VGS=±20V
-
-
±100
nA
ID=4A
-
5
8
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=24V
-
1
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
3
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=1A
-
8
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
12
-
ns
tf
Fall time
RD=15Ω
-
3
-
ns
Ciss
Input capacitance
VGS=0V
-
270
430
pF
Coss
Output capacitance
VDS=25V
-
70
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.1
Ω
Min.
Typ.
Max. Units
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
Test Conditions
VSD
Forward voltage
trr
Reverse recovery time
IS=4A, VGS=0V,
-
14
-
ns
Qrr
Reverse recovery charge
dI/dt=100A/µs
-
9
-
nC
2
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
6/16/2006 Rev.3.01
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SSM2316GN
12
12
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
10 V
7.0 V
5.0 V
4.5 V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
8
4
8
4
V G = 3.0 V
V G = 3.0 V
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
4
Fig 2. Typical Output Characteristics
65
1.8
ID=4A
V G =10V
ID=2A
o
55
1.5
T A =25 C
Normalized R DS(ON)
RDS(ON) (mΩ )
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
45
1.2
0.9
35
0.6
25
2
4
6
8
-50
10
Fig 3. On-Resistance vs. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.8
3.0
1.4
Normalized VGS(th) (V)
4.0
T j =150 o C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
2
T j =25 o C
2.0
1.0
1.0
0.6
0.0
0.2
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
6/16/2006 Rev.3.01
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM2316GN
f=1.0MHz
1000
I D =4A
10
V DS =15V
V DS =20V
V DS =24V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
10
0
0
2
4
6
1
8
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
100us
1ms
1
10ms
100ms
T A =25 o C
Single Pulse
0.1
1s
DC
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270°C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
VG
V DS =5V
ID , Drain Current (A)
9
T j =25 o C
QG
T j =150 o C
4.5V
QGS
6
QGD
3
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6/16/2006 Rev.3.01
Fig 12. Gate Charge Circuit
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SSM2316GN
PHYSICAL DIMENSIONS
SOT-23-3
SOT-23-3
SYMBOL MILLIMETERS
MIN.
MAX.
A
0.89
1.45
A1
0
0.15
A2
0.70
1.30
b
0.30
0.50
c
0.08
0.25
D
2.65
3.10
E
2.10
3.00
E1
1.19
2.30
e
0.95BSC
e1
1.90BSC
L
0.30
L1
Θ
0.60
0.60REF
0°
8°
*Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER CODE: NI = SSM2316GN
First character is underlined to indicate Pb-free part
NIXX
XX = DATE/LOT CODE - contact SSC for
information on decoding this.
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB).
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use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
6/16/2006 Rev.3.01
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