STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 G1 D G2 FEATURE z z z z STN8205 SYA S1 D z 20V/4.0A, RDS(ON) = 30m-ohm@VGS =4.5V 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design S2 S：Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STN8205DST6RG TSOP-6 SYA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +/-20 V ID 5.0 A Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ 3.4 Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction) IS 2 A Power Dissipation PD 1.15 W TA=25℃ TA=70℃ Operation Junction Temperature 0.75 TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA V VDS=0V,VGS=+/-20V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=85℃ 5 VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Forward Transconductance RDS(on) gfs Diode Forward Voltage Dynamic Total Gate Charge VSD Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-On Time Turn-Off Time VDS≦5V,VGS=4.5V 0.6 5 uA A VGS=4.5V,ID=4.0A 0.025 0.030 VGS=2.5V,ID=3.4A 0.037 0.042 VDS=5V,ID=3.6A 13 IS=1.6A,VGS=0V 0.8 Qg Td(on) tr Td(off) tf V 1.2 VGS(th) Drain-source On-Resistance 20 Ω S 1.2 V 10.5 VDS=10V,VGS=4.5V,VDS=2.8A 2.0 nC 2.5 VDS=8V,VGS=0V f=1MHz VDD=10V, RL=10Ω, ID=4.0A, VGEN=4.5V, RG=6Ω 805 155 122 18 5 45 22 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 pF nS STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A TSOP-6 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1