STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURE PIN CONFIGURATION TSOP-6P z z z z z 1.2.5.6.Drain 3.Gate -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design 4.Source PART MARKING TSOP-6P Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking STP3481S6RG TSOP-6P 81YA ※ Process Code : A ~ Z ; a ~ z 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 STP3481 P Channel Enhancement Mode MOSFET -5.2A ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V ID -5.2 -4.2 A IDM -20 A Continuous Source Current (Diode Conduction) IS -1.7 A TA=25℃ TA=70℃ PD 2.0 1.3 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 STP3481 P Channel Enhancement Mode MOSFET -5.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=-250uA -1.0 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -3.0 V VDS=0V,VGS=±20V ±100 Na VDS=-24V,VGS=0V -1 -10 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=55℃ On-State Drain Current ID(on) VDS≦-5V,VGS=-10V Drain-source On-Resistance RDS(on) VGS=-10.0V,ID=-5.2A VGS=-4.5V,ID=-4.2A Forward Transconductance gfs VDS=-5.0V,ID=-4.0A Diode Forward Voltage VSD IS=-1.0A,VGS=0V -10 UA A 0.041 0.055 0.058 0.075 10 Ω S -0.8 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=-15V VGS=-10V ID≣-4.0A VDS=-15V VGS=0V F=1MHz Crss VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω tr td(off) tf 14 21 1.9 nC 3.7 540 131 pF 105 10 16 15 25 32 50 21 32 nS 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 STP3481 P Channel Enhancement Mode MOSFET -5.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 STP3481 P Channel Enhancement Mode MOSFET -5.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 STP3481 P Channel Enhancement Mode MOSFET -5.2A TSOP-6P PACKAGE OUTLINE C 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1